Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance

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概要

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• An n+ GaN cap layer has been applied on an AlGaN/GaN high electron mobility transistor (HEMT) to achieve a non-alloyed ohmic contact. Delta dopings were used at the heterointerface of the n+ GaN cap and AlGaN layer to lower the AlGaN potential barrier and to improve communication between the n+ GaN cap and the two-dimensional electron gas (2DEG) channel. Non-alloyed ohmic contact resistance as low as 0.2 $\Omega$$\cdot$mm, and sheet resistance of 60 $\Omega$/$\square$ were achieved. Selective etch and sidewall technology were applied during processing. The n+ capped device was fabricated and compared to a standard AlGaN/GaN HEMT. Lower on-resistance and access resistance, higher $ f_{\tau}$ and $ f_{\text{MAX}}$, and better linearity in terms of $g_{m}$ were achieved.

• 2007-09-25

著者

• Keller Stacia

  Department Of Electrical And Computer Engineering University Of California

• Denbaars Steven

  Department Of Electrical And Computer Engineering University Of California

• Mishra Umesh

  Department Of Electrical And Computer Engineering University Of California

• Pei Yi

  Department Of Electrical And Computer Engineering University Of California

• Shen Likun

  Department Of Electrical And Computer Engineering University Of California

• Mccarthy Lee

  Departments Of Electrical And Computer Engineering University Of California Santa Barbara

• Palacios Tomas

  Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.

• Fichtenbaum Nicholas

  Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.

• Mishra Umesh

  Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Shen Likun

  Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.

• Keller Stacia

  Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Keller Stacia

  Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.

• Mccarthy Lee

  Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.

• DenBaars Steven

  Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

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