Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy(GaN-Based Devices,<Special Section>Heterostructure Microelectronics with TWHM2005)

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In this paper we review our recent work developing the growth of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on SiC (0001) by plasma-assisted molecular beam epitaxy (PA-MBE). State-of-the-art AlGaN/GaN HEMTs have been achieved using MBE-grown material. Buffer leakage was an important limiting factor for early devices. We have shown that by appropriately controlling the Al/N flux ratio during growth of the nucleation layer on SiC(0001), low-leakage GaN buffers can be subsequently grown. In addition, a "modulated growth" technique was developed to achieve large area uniformity and surface morphology control. High-performance HEMTs were fabricated utilizing these two techniques. On 200nm gate-length devices, at 4GHz an output power density of 8.4W/mm was obtained with a power-added efficiency (PAE) of 67% at a drain bias of 30V. At a higher drain bias (42V), 13.7W/mm with a PAE of 55% was achieved.
社団法人電子情報通信学会の論文
2006-07-01