Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors
スポンサーリンク
概要
- 論文の詳細を見る
- 2009-01-25
著者
-
Masui Hisashi
Department Of Electrical And Computer Engineering University Of California
-
Keller Stacia
Department Of Electrical And Computer Engineering University Of California
-
Speck James
Materials Department University Of California
-
DenBaars Steven
Department of Materials Engineering, University of California
-
Mishra U
Department Of Electrical And Computer Engineering University Of California
-
Keller Stacia
Electrical And Computer Engineering Department University Of California
-
Denbaars Steven
Electrical And Computer Engineering Department University Of California
-
FUJIWARA Tetsuya
Department of Electrical and Computer Engineering, University of California
-
HIGASHIWAKI Masataka
Department of Electrical and Computer Engineering, University of California
-
MISHRA Umesh
Department of Electrical and Computer Engineering, University of California
-
RAJAN Siddharth
Department of Electrical and Computer Engineering, University of California
-
Denbaars Steven
Nicp/erato Jst Ucsb Group University Of California
-
Fujiwara Tetsuya
Department Of Electrical And Computer Engineering University Of California
-
Mishra Umesh
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
-
Keller Stacia
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
-
DenBaars Steven
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
-
Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
関連論文
- Correlation between Optical Polarization and Luminescence Morphology of (1122)-Oriented InGaN/GaN Quantum-Well Structures
- Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix
- High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
- Increased polarization ratio on semipolar (1122) InGaN/GaN light-emitting diodes
- Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate
- Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
- 立方晶および六方晶InGaNの発光特性比較 : 分極効果の有無と励起子局在効果(進展する窒化物半導体光・電子デバイスの現状,及び一般)
- 立方晶および六方晶InGaNの発光特性比較 : 分極効果の有無と励起子局在効果(進展する窒化物半導体光・電子デバイスの現状,及び一般)
- High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
- Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
- Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field
- Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
- Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
- Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5mW under Pulsed Operation
- Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
- Effects of Anthracene Doping on Electrical and Light-Emitting Behavior of 8-Hydroxyquinoline-Aluminum-Based Electroluminescent Devices
- Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
- Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides
- Plane Dependent Growth of GaN in Supercritical Basic Ammonia
- Demonstration of 426nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates
- Compositional Dependence of Nonpolar m-Plane In_xGa_N/GaN Light Emitting Diodes
- Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
- Ammonothermal Growth of GaN on an over-1-inch Seed Crystal
- Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
- Growth of AlN by the Chemical Vapor Reaction Process
- Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
- Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
- High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates
- Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors
- Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors
- Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures
- High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
- Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
- Low ohmic contact resistance m-plane AlGaN/GaN heterojunction field-effect transistors with enhancement-mode operations
- Si delta-doped m-plane AIGaN/GaN heterojunction field-effect transistors
- Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC
- Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
- Non-planar Selective Area Growth and Characterization of GaN and AlGaN
- GaN-Based FETs for Microwave Power Amplification (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers
- Spiral Growth of InGaN Nanoscale Islands on GaN
- Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire
- Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Teansport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy : Semiconductors
- Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
- Effect of Substrate Miscut on the Direct Growth of Semipolar (1011) GaN on (100) MgAl_2O_4 by Metalorganic Chemical Vapor Deposition
- Effects of Phosphor Application Geometry on White Light-Emitting Diodes
- Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate
- Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime
- Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF_4-Treatment
- Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II-VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
- Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
- Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors
- Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
- Selective Area Mass Transport Regrowth of Gallium Nitride
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
- MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors
- The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganie Chemical Vapor Deposition
- Morphological and Structural Transitions in GaN Filrms Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
- AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4nm
- GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation
- Characterization of a-Plane GaN/(Al, Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition
- Synthesis and Characterization of Highly Resistive Epitaxial Indium-Doped SnO_2
- Non-Alloyed Schottky and Ohmic Contacts to As-Grown and Oxygen-Plasma Treated n-Type SnO_2 (110) and (101) Thin Films
- InGaN/GaN Blue Laser Diode Grown on Semipolar (3031) Free-Standing GaN Substrates
- Lattice Tilt and Misfit Dislocations in (1122) Semipolar GaN Heteroepitaxy
- m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching
- Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- Ga Adlayer Governed Surface Defect Evolution of (0001)GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy
- Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
- Lasing Characteristics of InGaP/InGaAIP Visible Lasers Grown by Metalorganic Chemical Vapor Deposition with Tertiarybutylphosphine (TBP)
- High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes : Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals
- AlGaN-Claddingb-free nonpolar InGaN/GaN laser diodes
- Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy
- Enhancement-Mode N-Polar GaN Metal--Insulator--Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz
- Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
- Critical Thickness for Onset of Plastic Relaxation in $(11\bar{2}2)$ and $(20\bar{2}1)$ Semipolar AlGaN Heterostructures
- N-polar 3-nitride green (540nm) light emitting diode
- Determination of Composition and Lattice Relaxation in Semipolar Ternary (In, Al, Ga)N Strained Layers from Symmetric X-ray Diffraction Measurements
- Substrate Reactivity and "Controlled Contamination" in Metalorganic Chemical Vapor Deposition of GaN on Sapphire
- Use of sub-nanometer thick AlN to arrest diffusion of ion-implanted Mg into regrown AlGaN/GaN layers
- Temperature dependent capacitance-voltage analysis of unintentionally doped and Si doped Al0.82In0.18N grown on GaN
- Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
- Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors
- AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers
- Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition
- Improvement of Internal Quantum Efficiency in 1.55 μm Laser Diodes with InGaP Electron Stopper Layer
- Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance
- Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
- Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal-Organic Chemical Vapor Deposition Using a Graded Growth Strategy
- Nonpolar $m$-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
- Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
- Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
- Non-planar Selective Area Growth and Characterization of GaN and AlGaN
- AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit
- Low Ohmic Contact Resistance $m$-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
- Nonlinear Susceptibility Measurement for Quadrupolar Response in a Dilute \Gamma_{3} Non-Kramers Doublet System Pr
- Nonlinear Susceptibility Measurement for Quadrupolar Response in a Dilute Γ₃ Non-Kramers Doublet System Pr₀.₀₅La₀.₉₅Pb₃
- Semipolar (20\bar{2}1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage