Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique

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概要

• 論文の詳細を見る

• Electroluminescence measurements were performed on GaN-based micro-cavity light-emitting diodes (MCLEDs) which had different cavity thickness. The MCLEDs were fabricated by laser lift off (LLO) technique to remove the sapphire substrate and were thinned with reactive ion etching (RIE) followed by chemical-mechanical polishing (CMP). The number of multiple peaks in the electroluminescence spectrum caused by interference effects decreased as the cavity thickness decreased. A far-field pattern measurement of the thin cavity sample showed a “rabbit ears” pattern, specific of microcavity emission.

• 2004-03-15

著者

• Denbaars Steven

  Nicp/erato Jst Ucsb Group University Of California

• Fujii Tetsuo

  Nicp/erato Jst Ucsb Group University Of California

• FUJITO Kenji

  NICP/ERATO JST, UCSB Group, University of California

• NAKAMURA Shuji

  NICP/ERATO JST, UCSB Group, University of California

• Margalith Tal

  Materials Department University Of California Santa Barbara

• Pattison Paul

  Materials Department University Of California Santa Barbara

• David Aurelien

  Materials Department University Of California Santa Barbara

• Schwach Carole

  Materials Department University Of California Santa Barbara

• Weisbuch Claude

  Materials Department University Of California

• Sharma Rajat

  Materials Department University Of California

• Pattison Paul

  Materials Department, University of California Santa Barbara, CA 93106-5050, U.S.A.

• Fujito Kenji

  NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Schwach Carole

  Materials Department, University of California Santa Barbara, CA 93106-5050, U.S.A.

• Fujii Tetsuo

  NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Margalith Tal

  Materials Department, University of California Santa Barbara, CA 93106-5050, U.S.A.

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