Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors
スポンサーリンク
概要
- 論文の詳細を見る
Ultra-low ohmic contact resistance of 0.1 $\Omega$ mm has been obtained as a step towards a deep-recess structure using N-polar GaN-based high electron mobility transistors (HEMTs). An AlGaN etchstop layer was investigated to obtain smooth and reliable gate recess. However due to reverse polarization, AlGaN results in a polarization-induced Schottky barrier which prevents ohmic contact to the channel through the etchstop. In this work, we have proposed a novel methodology to contact the two-dimensional electron gas (2DEG) by etching through the GaN cap and the AlGaN etchstop to eliminate the barrier and angular-evaporation of metals to achieve side-alloying resulting in very low ohmic contact resistance of 0.1 $\Omega$ mm achieved to N-polar GaN 2DEG. This result is state-of-the-art for alloyed contacts achieved to GaN-based 2DEG.
- 2010-02-25
著者
-
Brown David
Department Of Chemical Engineering Faculty Of Engineering Tokyo Institute Of Technology
-
Umesh K.
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
-
Keller Stacia
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
-
Stacia Keller
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
-
David F.
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
関連論文
- Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors
- Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors
- GaN-Based FETs for Microwave Power Amplification (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Stoichiometric Equilibrium Modelling of Biomass Gasification : Validation of Artificial Neural Network Temperature Difference Parameter Regressions
- Dithiol-Linked Gold Colloidal Particles Used for Fabricating Single Electron Transistors
- Coagulation Abnormalities Following Primary Intracerebral Hemorrhage
- Dealing with false positive and negative preclinical data in predicting human risk
- Temperature dependent capacitance-voltage analysis of unintentionally doped and Si doped Al0.82In0.18N grown on GaN
- Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
- Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors
- Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition
- Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance
- Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal-Organic Chemical Vapor Deposition Using a Graded Growth Strategy
- Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
- Non-planar Selective Area Growth and Characterization of GaN and AlGaN
- Low Ohmic Contact Resistance $m$-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations