Improvement of Internal Quantum Efficiency in 1.55 μm Laser Diodes with InGaP Electron Stopper Layer
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概要
- 論文の詳細を見る
This paper investigates the effect of the conduction band offset energy at the interface between the separate confinement layer (SCL) and the p-cladding on the temperature behavior of InGaAsP lasers emitting at 1.5 μm. The performance of a laser structure incorporating an additional In_<0.81>Ga_<0.19>P barrier at that interface is compared to that of a regular laser structure. The results are analyzed using a comprehensive simulation software. It is shown that the current leakage at the SCL-p-cladding interface is not the dominant current loss mechanism at room temperature. However, at a higher temperature an additional InGaP electron stopper layer can efficiently reduce the electron leakage current. Finally, our measurements show that above a critical temperature the absorption loss increases dramatically.
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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Bowers John
Department Of Electrical And Computer Engineering University Of California Santa Barbara
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Bowers John
Department Of Electrical And Computer Engineering University Of California
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Denbaars Steven
Department Of Electrical And Computer Engineering University Of California Santa Barbara
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Denbaars Steven
Department Of Electrical And Computer Engineering University Of California
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Abraham Patrick
Department Of Electrical And Computer Engineering University Of California Santa Barbara
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PIPREK Joachim
Department of Electrical and Computer Engineering, University of California Santa Barbara
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Piprek Joachim
Department Of Electrical And Computer Engineering University Of California Santa Barbara
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DenBaars Steven
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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