Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2006-10-25

著者

• Speck James

  Materials Department University Of California

• KOBLMULLER Gregor

  Materials Department, University of California

• RAJAN Siddharth

  Materials Department and Electrical and Computer Engineering Department, University of California Sa

• Parish Giacinta

  School Of Electrical Electronic And Computer Engineering The University Of Western Australia

• Koblmuller Gregor

  Materials Department University Of California

• Nener Brett

  School Of Electrical Electronic And Computer Engineering The University Of Western Australia

• Gallinat Chad

  Materials Department University Of California

• FEHLBERG Tamara

  School of Electrical, Electronic and Computer Engineering, The University of Western Australia

• UMANA-MEMBRENO Gilberto

  School of Electrical, Electronic and Computer Engineering, The University of Western Australia

• BERNARDIS Sarah

  Materials Department, University of California

• Rajan Siddharth

  Materials Department University Of California

• Bernardis Sarah

  Materials Department University Of California

• Umana-membreno Gilberto

  School Of Electrical Electronic And Computer Engineering The University Of Western Australia

• Fehlberg Tamara

  School Of Electrical Electronic And Computer Engineering The University Of Western Australia

• Speck James

  Materials Department And Erato/jst Ucsb Group University Of California

• Speck James

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

関連論文

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• Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
• Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field
• Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
• Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
• Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
• Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
• Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides
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• Demonstration of 426nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates
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