Impact of Substrate Miscut on the Characteristic of $m$-plane InGaN/GaN Light Emitting Diodes

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概要

• 論文の詳細を見る

• Effect of $m$-plane GaN substrate miscut was investigated for InGaN/GaN multi quantum wells (MQWs) light emitting diodes (LEDs). The n-GaN and InGaN/GaN LEDs were grown by metal organic chemical vapor deposition on $m$-plane ($1\bar{1}00$)GaN substrates with miscut angles toward the [$000\bar{1}$] direction of 0.01 (nominally on-axis $m$-plane), 0.45, 0.75, 5.4, and 9.6°. The surface morphology improved with increasing the miscut angles toward the [$000\bar{1}$] direction. The peak emission wavelength of the electroluminescence grown on the on-axis $m$-plane and the miscut angle of 0.45° was 391–396 nm, while the miscut angle of 5.4 and 9.6° showed 440–454 nm. These results demonstrate that the surface morphology of GaN and In incorporation in the MQWs are strongly impacted by the miscut angle of GaN substrate.

• Japan Society of Applied Physicsの論文
• 2007-12-25

著者

• DENBAARS Steven

  Materials Department and Electrical Engineering Department, University of California

• Yamada Hisashi

  Materials Department University Of California

• Iso Kenji

  Materials Department University Of California

• Fujito Kenji

  Optoelectronics Laboratory Mitsubishi Chemical Corporation

• Nakamura Shuji

  Materials Department University Of Cahfornia

• Speck James

  Materials Department And Erato/jst Ucsb Group University Of California

• Saito Makoto

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Speck James

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Fujito Kenji

  Optoelectronic Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan

• DenBaars Steven

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Speck James

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

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