High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar $m$-plane Bulk GaN Substrate

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概要

• 論文の詳細を見る

• Improved nonpolar $m$-plane $(1\bar{1}00)$ light emitting diode (LED) with a thick InGaN active layer of 8 nm and a thick GaN barrier layer of 37.5 nm for multi-quantum-well (MQW) structure have been fabricated on low extended defect bulk $m$-plane GaN substrates using metal organic chemical vapor deposition (MOCVD). The peak wavelength of the electroluminescence (EL) emission from the packaged LED was 468 nm. The output power and external quantum efficiency (EQE) were 8.9 mW and 16.8%, respectively, at a DC driving current of 20 mA.

• Japan Society of Applied Physicsの論文
• 2007-10-25

著者

• FELLOWS Natalie

  Materials Department and Electrical Engineering Department, University of California

• DENBAARS Steven

  Materials Department and Electrical Engineering Department, University of California

• Yamada Hisashi

  Materials Department University Of California

• Iso Kenji

  Materials Department University Of California

• Fujito Kenji

  Optoelectronics Laboratory Mitsubishi Chemical Corporation

• Hirasawa Hirohiko

  Materials Department And Electrical Engineering Department University Of California

• Nakamura Shuji

  Materials Department University Of Cahfornia

• Speck James

  Materials Department And Erato/jst Ucsb Group University Of California

• Saito Makoto

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Saito Makoto

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Speck James

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Speck James

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Yamada Hisashi

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Fujito Kenji

  Optoelectronics Laboratory, Mitsubishi Chemical Co., Ltd., 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan

• Fujito Kenji

  Optoelectronic Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan

• Iso Kenji

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• DenBaars Steven

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• DenBaars Steven

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Fellows Natalie

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Hirasawa Hirohiko

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Speck James

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

• FUJITO Kenji

  Optoelectronic Laboratory, Mitsubishi Chemical Corporation

関連論文

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