Low-Temperature Microscopic Photoluminescence Images of Epitaxially Laterally Overgrown GaN : Optical Properties of Condensed Matte
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概要
- 論文の詳細を見る
Microscopic photoluminescence (PL) measurement has been carried out on epitaxially laterally overgrown (ELO) GaN with a spatial resolution of 0.3μm at 15K. PL emissions ascribed to free excitons (E_<XA>) and excitons bound to donors (D^0X) were clearly discriminated. In a plan-view observation, these band-edge emissions from a region above a SiO_2 mask are twice as large as those from a region above the opening between masks. In a cross-sectional observation, the emission intensity at 3.494eV ascribed to E_<XA> increased along the growth direction. An intense emission at 3.487eV ascribed to D^0X was observed above the SiO_2 mask within a distance of 8μm from the SiO_2 mask.
- 社団法人応用物理学会の論文
- 2001-04-15
著者
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SARAIE Junji
Department of Electronics and Information Science, Kyoto Institute of Technology
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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Nakamura Shuji
Materials Department University Of Cahfornia
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