Growth of GaAs1-xBix/AlyGa1-yAs Multi-Quantum-Well Structures
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概要
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GaAs1-xBix/AlyGa1-yAs ($0<x<0.05$, $0<y<0.26$) multi-quantum-wells (MQWs) have been successfully grown by molecular-beam epitaxy. The intensity oscillation and streaky patterns of in situ reflection high-energy electron diffraction suggested the layer-by-layer growth of GaAs1-xBix/AlyGa1-yAs MQWs. Clear satellite peaks attributed to periodical structures were observed in high-resolution X-ray diffraction measurements. The cross-sectional transmission microscopy images and secondary-ion mass spectrometry depth profile showed that GaAs1-xBix/AlyGa1-yAs MQWs with a smooth interface can be fabricated without distinct segregation.
- 2010-07-25
著者
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Oe Kunishige
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Tominaga Yoriko
Department Of Electronics Kyoto Institute Of Technology
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Oe Kunishige
Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan
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Yoshimoto Masahiro
Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan
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Fuyuki Takuma
Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan
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