Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
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概要
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GaAs1-xBix has been grown at a substrate temperature ($T_{\text{sub}}$) between 350 and 410°C by molecular beam epitaxy. The relationship between GaBi molar fraction ($x$) evaluated by Rutherford backscattering spectroscopy and the lattice constant showed good linearity. To achieve Bi incorporation into the epilayer, As flux was adjusted in a limited range on the brink of As shortage on the growing surface. The Bi incorporation was saturated at a large Bi flux, probably due to a low miscibility of Bi with GaAs. The value of $x$ increased up to 4.5% with decreasing $T_{\text{sub}}$ to 350°C.
- 2003-10-15
著者
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Oe Kunishige
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Murata Satoshi
Department Of Computational Intelligence And Systems Science Interdisciplinary Graduate School Of Sc
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CHAYAHARA Akiyoshi
AIST Kansai
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HORINO Yuji
AIST Kansai
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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Chayahara Akiyoshi
AIST Kansai, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan
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Oe Kunishige
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Yoshimoto Masahiro
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Horino Yuji
AIST Kansai, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan
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Murata Satoshi
Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University
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Saraie Junji
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Murata Satoshi
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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MURATA SATOSHI
Department of Agricultural Engineering, Kyushu University
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