CHAYAHARA Akiyoshi | AIST Kansai

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概要

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著作論文

Model of reactive microwave plasma discharge for growth of single-crystal diamond (Special issue: Advanced plasma science and its applications for nitrides and nanomaterials)
Qualitative Correspondences of Experimentally Obtained Growth Rates and Morphology of Single-Crystal Diamond with Numerical Predictions of Plasma and Gas Dynamics in Microwave Discharges for Various Substrate Holder Shapes
Fe Deposition or Implantation into Vacuum Arc Deposited Cr Films
Ion-Beam 3C-SiC Heteroepitaxy on Si
Epitaxial Growth of Pure ^Si Thin Films Using Isotopically Purified Ion Beams : Semiconductors
Silicon Carbide Film Growth Using Dual Isotopical ^Si^- and ^C^+ Ion species
Formation of High Purity films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method
Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process
Macroparticle-Free Ti-Al Films by Newly Developed Coaxial Vacuum Arc Deposition
Chemical State and Refractive Index of Mg-Ion-Implanted Silica Glass
Parameter Dependence of Stable State of Densely Contact-Electrified Electrons on Thin Silicon Oxide
New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
Fabrication of 1 Inch Mosaic Crystal Diamond Wafers
Dense Structure of SiN_x Films Fabricated by Radical Beam Deposition Method Using Hexamethyldisilazane
Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
Metallic Alloy Coatings Using Coaxial Vacuum Arc Deposition
Diffusivities and Activities of S Implanted into GaAs through an As-doped a-Si:H Film
Time Dependent Dielectric Breakdown of Thin Silicon Oxide Using Dense Contact Electrification
Time Evolution of Contact-Electrified Electron Dissipation on Silicon Oxide Surface Investigated Using Noncontact Atomic Force Microscope
Spatial Distributions of Densely Contact-Electrified Charges on a Thin Silicon Oxide
New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
New III–V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy
Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
Dense Structure of SiNx Films Fabricated by Radical Beam Deposition Method Using Hexamethyldisilazane

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