Silicon Carbide Film Growth Using Dual Isotopical ^<28>Si^- and ^<12>C^+ Ion species
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概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2000-01-20
著者
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Horino Y
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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KINOMURA Atsushi
Osaka National Research Institute, AIST
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HORINO Yuji
Osaka National Research Institute, AIST
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HORINO Yuji
National Institute of Advanced Industrial Science and Technology
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TSUBOUCHI Nobuteru
Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology
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CHAYAHARA Akiyoshi
Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology
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KINOMURA Atsushi
National Institute of Advanced Industrial Science and Technology
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TSUBOUCHI Nobuteru
Osaka National Research Institute
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CHAYAHARA Akiyoshi
Osaka National Research Institute
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HECK Claire
Osaka National Research Institute
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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CHAYAHARA Akiyoshi
AIST Kansai
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Chayahara Akiyoshi
Department Of Electrical Engineering Hiroshima University
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Chayahara Akiyoshi
Government Industrial Research Institute Osaka
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Heck Claire
National Institute Of Advanced Industrial Science And Technology Aist Kansai Laboratory Of Purified
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Hirano Y
Advanced Device Development Dept. Renesas Technology Corp.
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Horino Yuji
National Inst. Of Advanced Industrial Sci. And Technol. Kansai Osaka Jpn
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Kinomura A
National Institute Of Advanced Industrial Science And Technology
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Tsubouchi Nobuteru
Laboratory Of Purified Materials National Institute Of Advanced Industrial Science And Technology
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