Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1986-08-20

著者

• OSAKA Yukio

  Department of Electrical Engineering, Hiroshima University

• Ueda M

  Tokyo Inst. Technol. Tokyo Jpn

• Ueda M

  Univ. Tokushima Tokushima Jpn

• Ueda M

  The Institute Of Scientific And Industrial Research Osaka University

• SHIMIZU Tatsuo

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• UEDA Masato

  Department of Applied Chemistry, Faculty of Engineering, Osaka Institute of Technology

• IMURA Takeshi

  Department of Electrical Engineering, Osaka University

• CHAYAHARA Akiyoshi

  Department of Electrical Engineering, Faculty of Engineering, Hiroshima University

• KUMEDA Minoru

  Department of Electronics, Faculty of Technology, Kanazawa University

• Chayahara Akiyoshi

  Department Of Electrical Engineering Hiroshima University

• Osaka Yukio

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Kumeda Minoru

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

• Imura T

  Mitsubishi Paper Mills Ltd.

• Imura T

  Department Of Electrical Engineering Hiroshima University

• Imura Takeshi

  Department Of Electrical Engineering Faculty Of Engineering Osaka University

• Shimizu Tatsuo

  Department Of Applied Physics University Of Tokyo

• Ueda Masahiro

  Department Of Techniques Faculty Of Education Fukui University

• Kumeda Minoru

  Department of Electric and Electronic Engineering. Kanazawa University

• Imura Takeshi

  Department of Chemistry, Faculty of Engineering Science, Osaka University

関連論文

• YBa_2Cu_3O_ Angle Grain Boundary Junction on Si Bicrystal Substrate
• Substitutional Doping of a-Si_xN_ : H : III-1: AMORPHOUS FILMS
• Wide Optical-Gap, Photoconductive a-Si_xN_: H
• Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
• A New Technique of Boron Doping in Si:H Films
• Chemically Amplified Photosensitive Poly(benzoxazole)
• New Convenient Synthetic Route for Photosensitive Poly(benzoxazole)
• Direct Synthesis of Photosensitive Poly(benzoxazole)
• Influence of Buffer Layers on Lead Magnesium Niobate Titanate Thin Films Prepared by Pulsed Laser Ablation
• Effect of Oxygen Pressure on (Ba_xSr_)TiO_3 Thin Films by Pulsed Laser Ablation
• Fast and Slow Processes in Light-Induced Electron Spin Resonance in Hydrogenated Amorphous Si-N Films
• Depth Profile and Line-Edge Roughness of Low-Molecular-Weight Amorphous Electron Beam Resists
• Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
• Microcrystallization in P-Doped Si:H Films at High Deposition Rate
• Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
• Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
• Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
• Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique
• Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
• Mossbauer Time Spectra of the Nuclear Forward Scattering from Coherently Vibrating Resonant Nuclei
• An Airborne Ultrasound Echo Analysis of a Polyhedron : Ultrasonic Propagation and Field
• New Positive - Type Photosensitive Poly(phenylene ether): Poly(2 - hydroxy - 6 - methylphenol - co - 2, 6 - dimethylphenol) with Diazonaphthoquinone
• Amorphous Silicon Static Induction Transistor
• Reduction of Interface Defect Density by Hydrogen Dilution in a-Si:H/ZnS Multilayer Films
• Exciton Structure in Alkali-Halide Crystals
• Epitaxial Growth of Ba_2YCu_3O_x Thin Film on Epitaxial ZrO_2/Si(100) : Electrical Properties of Condensed Matter
• Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
• Identification of a New Defect in Silicon Nitride Films
• Thermal Equilibration of Defect Density in Hydrogenated Amorphous Silicon-Germanium Alloys
• Comparison between ESR and CPM for the Gap States in a-Si-Ge:H
• Preparation of B-Si-Ge Alloys by Sputter-Assisted-Plasma CVD
• Changes of Structural, Electrical, and Optical Properties of Microcrystalline Si_xGe_ Films by Annealing
• Electronic Properties of Post-Hydrogenated Lightly-Boron-Doped CVD Amorphous Silicon
• Growth of Microcrystalline Si_xGe_ Alloy Films by Sputter-Assisted-Plasma CVD
• Temperature Simulation of Cooling Process of Ge Droplets in Laser Droplet Epitaxy(Surfaces, Interfaces, and Films)
• Preparation of Twin- and Crack-Free LiNbO_3 Films by Pulsed Laser Ablation Using Nucleation Process at High Temperature : Surfaces, Interfaces, and Films
• Rotational Honeycomb Epitaxy of Ru Thin Films on Sapphire (0001) Substrate : Surfaces, Interfaces, and Films
• Preparation of Pb(Zn_Ti_)O_3 Films by Laser Ablation
• Thermal Analysis of Target Surface in the Ba-Y-Cu-O Film Preparation by Laser Ablation Method
• Preparation of Ba-Y-Cu-O Superconducting Films by Laser Ablation with and without Laser Irradiation on Growing Surface : Special Section : Solid State Devices and Materials 2 : Thin Film Devices and Superconductors
• Nonlinear I-V Characteristics of Bi_2Sr_2CaCu_2O_x Thin Films
• Direct Observation of Deoxyribonucleic Acid Anchored between an Aluminum Electrode and an Atomic Force Microscope Cantilever
• Atomic Force Microscopy Observation of Deoxyribonucleic Acid Stretched and Anchored onto Aluminum Electrodes
• Preparation and Properties of Ultrathin High-T_c Superconducting Films on Si
• Fabrication of All-High-T_c Josephson Junction Using As-Grown YBa_2Cu_3O_x Thin Films
• Josephson Effect in Wide Superconducting Bridges Made by Epitaxial Ba_2YCu_3O_x Thin Films on YSZ/Si(100)
• Positive-Working Alkaline Developable Photosensitive and Second-Order Nonlinear Optical Polyimide
• Photosensitive Polyimides with Second-Order Nonlinear Optical Property
• Single-Electron-Charging Effect Controlled by the Distance between a Substrate and a Liquid-Crystal Molecule
• Piezoelectric Actuator and Step-Up Voltage Circuit for an Optical Switch : Ultrasonic Motor, Actuator and Transducer
• Load Resistance Characteristics of LiNbO_3 Piezoelectric Transformers : SAW and Communication Device
• Two-Phase Structure of a-Si_N_x:H Fabricated by Microwave Glow-Discharge Technique
• Quantum Size Effect and HRTEM Observation of CdSe Microcrystallites Doped into SiO_2-Glass Films Prepared by Rf-Sputtering
• A New Method of Measuring Internal Stress in Thin Films Deposited on Silicon by Raman Spectroscopy
• Raman Scattering Study of Tehrmal SiO_2 Layers Grown on Silicon
• Epitaxial Growth of CdTe by H_2 Sputtering : Semiconductors and Semiconductor Devices
• Deposition of Hydrogenated Microcrystalline Films of CdTe by Chemical Sputtering in Hydrogen : Surfaces, Interfaces and Films
• Epitaxial Growth of CdTe on InSb(100) by RF Sputtering
• Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
• Compatibility of Polyether Sulfone and Polymide Derived from Isomerization of Polysoimide. An Approach to In-Situ Generated Rigid-Rod Molecular Composite
• In situ Formed Three Layer Film by Isomerization of Fluorinated Polyisoimide in Polyethersulfone as a Matrix Polymer
• Reflectance spectra of BN Materials in the Vacuum Ultraviolet
• Photoluminescence of Si Microcrystals Embedded in Si0_2 Glass Films
• Photoluminescence from Si Network in SiO_2-Doped Si Films
• Appearance of Quasi-Direct Optical Transition from Si Network in SiO_2-Doped Si Films
• Visible Photoluminescence from Si Microcrystals Embedded in SiO_2 Glass Films
• Preparation and Properties of Si Microcrystals Embedded in SiO_2 Glass Films
• Preparation and Properties of Ge Microcrystals Embedded in SiO_2 Glass Films
• Structural Changes of Amorphous GeTe_2 Films by Annealing (Formation of Metastable Crystalline GeTe_2 Films)
• Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
• Synthesis and Characterization of Calix[4]resorcinearene Bearing Azobenzene Moieties as Novel Photofunctional Materials
• A Positive-Working Alkaline Developable Photosensitive Polyimide for Second-Order Nonlinear Optics
• Preparation of the High-T_c Superconducting Phase in Bi, Pb-Sr-Ca-Cu-O films by Pyrolysis of 2-Ethylhexanoates : Electrical Properties of Condensed Matter
• Formation of High-T_c Superconducting BiSrCaCu_2O_x Films on ZrO_2/Si(100) : Electrical Properties of Condensed Matter
• preparation of BiSrCaCu_2O_x Films with T_c>77 K by Pyrolysis of Organic Acid Salts : Electrical Properties of Condensed Matter
• Density Functional Theory Calculations of Photoabsoption Spectra of Organic Molecules in the Vacuum Ultraviolet Region
• DFT Calculations of Photoabsorption Spectra in the VUV Region for Design of Photoresist Materials for 157nm Lithography
• DSC Studies of Glassy Behavior in P-Doped a-Si:H : Condensed Matter
• Optical and Mechanical Properties of Hard Hydrogenated Amorphous Carbon Films Deposited by Plasma CVD
• Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers
• Formation and Properties of Cubic Boron Nitride Films on Tungsten Carbide by Plasma Chemical Vapor Deposition
• CuCl Microcrystallite-Doped SiO_2 Glass Thin Films Prepared by RF Sputtering
• Preparation and Properties of In_xGa_As Microcrystallites Embedded in SiO_2 Glass Films
• Evaluation of Epitaxial ZnTe Films Prepared by RF Sputtering by Means of Ion Beam Channeling
• Semiconducting CdTe Microcrystalline-Doped SiO_2 Glass Thin Films Prepared by Rf-Sputtering
• Heteroepitaxial Growth of ZnS_xTe_ on GaAs(100) by RF Sputtering
• Preparation and Crystallization Process of the High-T_c Superconducting Phase (T_c(end)>100 K) in Bi, Pb-Sr-Ca-Cu-O Glass-Ceramics
• Synthesis of Metastable Ge_xSn_ Alloys by Chemical Sputtering in H_2
• Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon : Surfaces, Interfaces and Films
• Characterization of the Structure in Hydrogenated Amorphous Silicon by Means of ^Sn Mossbauer Spectroscopy
• Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
• Effects of Film Thickness and Substrate-Film Interface on the Formation of Metastable Crystalline GeTe_2 from Amorphous GeTe_2 Film
• A Negative-Working Alkaline Developable Photoresist Based on Calix[4]resorcinarene, a Cross-linker, and a Photoacid Generator
• Preparation and Crystallization Process of High-T_c Superconducting Bi, Pb-Sr-Ca-Cu-O Film (T_c=101 K) by Melt-Quenching and Annealing Techniques
• A New Three-Component Photoresist Based on Calix[4]resorcinarene Derivative, a Cross-linker, and a Photo-acid Generator
• Control of Molecular Weight Distribution in Polycondensation Polymers. Polyamide Synthesis
• New Negative-Type Photosensitive Polyimide Based on Hyperbranched Poly(ether imide), a Cross-Linker, and a Photoacid Generator
• New Positive-Type Photosensitive Polyimide: Hyperbranched Poly(Ether-Imide)with Diazonaphthoquinone
• Current Transport in Doped Polycrystalline Silicon
• Note on Localized States in Amorphous Germanium

もっと見る 閉じる

スポンサーリンク