Preparation of the High-T_c Superconducting Phase in Bi, Pb-Sr-Ca-Cu-O films by Pyrolysis of 2-Ethylhexanoates : Electrical Properties of Condensed Matter

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-12-20

著者

• OSAKA Yukio

  Department of Electrical Engineering, Hiroshima University

• KATO Takeshi

  Department of Applied Physics, University of Miyazaki

• Kato Takayoshi

  Reseach Institute Of Electronics Shizuoka University

• Kato T

  Graduate School Of Engineering Nagoya University

• Koshikawa Takanori

  Fundamental Electronics Research Institute Academic Frontier Promotion Center Osaka Electro-communic

• IMURA Takeshi

  Department of Electrical Engineering, Osaka University

• Kato T

  Ashikaga Inst. Technol. Tochigi

• Kato T

  Optoelectronics Technology Research Lab. Ibaraki

• NASU Hiroyuki

  Department of Chemistry for Materials, Faculty of Engineering, Mie University

• Osaka Y

  Department Of Electrical Engineering Hiroshima-denki Institute Of Technology

• Osaka Yukio

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Nasu Hiroyuki

  Department Of Chemistry For Materials Faculty Of Engineering Mie University

• Imura T

  Mitsubishi Paper Mills Ltd.

• Imura T

  Department Of Electrical Engineering Hiroshima University

• Imura Takeshi

  Department Of Electrical Engineering Faculty Of Engineering Osaka University

• Kondo T

  Graduate School Of Science Nagoya University

• MAKIDA Seigo

  Department of Electrical Engineering, Faculty of Engineering, Hiroshima University

• Matsuo Shinji

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

関連論文

• YBa_2Cu_3O_ Angle Grain Boundary Junction on Si Bicrystal Substrate
• Super-High Brightness and High-Spin-Polarization Photocathode
• Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : II. Strain in GaAsP Layer
• Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : I. Mosaic Structure
• Energy-Scale Calibration of the Suzaku X-Ray Imaging Spectrometer Using the Checker Flag Charge-Injection Technique in Orbit
• PE-349 Gender Difference in the Responsiveness to Corticosteroid Therapy in Patients with Cardiac Sarcoidosis(PE059,Heart Failure (Treatment) 2 (M),Poster Session (English),The 73rd Annual Scientific Meeting of The Japanese Circulation Society)
• Magnetic Force Microscopy Study of Thermomagnetic Writing on Micron- and Submicron-Patterned TbFe Films Using Current Pulses
• Dependences of Giant Magnetoresistance in Co/Cu Multilayers on Sputtering Conditions
• Influences of Ga ion Irradiation on Magnetic Properties of Planar-patterned Co/Pd multilayers
• Magnetic Domain Structure of NiFe and MnIr/NiFe Elelnents Patterned by Focused Ion Beam
• Substitutional Doping of a-Si_xN_ : H : III-1: AMORPHOUS FILMS
• Wide Optical-Gap, Photoconductive a-Si_xN_: H
• Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
• A New Technique of Boron Doping in Si:H Films
• Current Status of Anticoagulation Therapy for Elderly Atrial Fibrillation Patients in Japan : From Hokuriku Atrial Fibrillation Trial
• PE-146 Current Status of Anticoagulation Therapy for Elderly Patients, from Hokuriku Atrial Fibrillation Trial(Arrhythmia, therapy(12)(A),Poster Session(English),The 72nd Annual Scientific Meeting of the Japanese Circulation Society)
• Intracystic Papilloma in the Breast of a Male Given Long-Term Phenothiazine Therapy : A Case Report
• A Case of Basal Cell Carcinoma of the Nipple and Areola with Intraductal Spread
• Room Temperature InAs_xP_Sb_y/InAs Photodetectors with High Quantum Efficiency
• Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
• Microcrystallization in P-Doped Si:H Films at High Deposition Rate
• Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
• Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
• Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
• Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique
• Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
• Adiabatic Compressibility of Aqueous Solutions of Amphiphiles with an Ammonium Group as the Hydrophilic Domain
• Molecular Arrangement at Cleaved Single-Crystal Surface of Steraric Acid Observed by Atomic Force Microscope
• Amorphous Silicon Static Induction Transistor
• Measurement of^ Np Fission Rate Ratio Relative to ^U Fission Rate in Cores with Various Thermal Neutron Spectrum at the Kyoto University Critical Assembly
• OE-272 Antifibrillatory Effects of Testosterone in Rat Atria : Role of Calcium Handling Proteins(Arrhythmia, basic-2, The 71st Annual Scientific Meeting of the Japanese Circulation Society)
• FRS-012 Regional Inhomogeneity in Activation of Sarcoendoplasmic Reticulum Ca-ATPase in Left Ventricle : A Basis for Diastolic Asynchrony(Cardiac Function "Ventricular Mechanics and Calcium Handling", The 71st Annual Scientific Meeting of the Japanese Cir
• Diamond Deposition and Behavior of Atomic Carbon Species in a Low-Pressure Inductively Coupled Plasma
• Behaviors of carbon atom density in hydrocarbon and fluorocarbon plasmas
• Measurement of Einstein's A Coefficient of the 296.7 nm Transition Line of the Carbon Atom
• Exciton Structure in Alkali-Halide Crystals
• Inhibitory Effect of a Synthetic Protease Inhibitor (Gabexate Mesilate) on the Respiratory Burst Oxidase in Human Neutrophils
• Epitaxial Growth of Ba_2YCu_3O_x Thin Film on Epitaxial ZrO_2/Si(100) : Electrical Properties of Condensed Matter
• Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
• Influence of Sulphidation Treatment on the Performance of Mid-Infrared InAsPSb/InAs Detectors
• Preparation of B-Si-Ge Alloys by Sputter-Assisted-Plasma CVD
• Changes of Structural, Electrical, and Optical Properties of Microcrystalline Si_xGe_ Films by Annealing
• Electronic Properties of Post-Hydrogenated Lightly-Boron-Doped CVD Amorphous Silicon
• Growth of Microcrystalline Si_xGe_ Alloy Films by Sputter-Assisted-Plasma CVD
• Nonlinear I-V Characteristics of Bi_2Sr_2CaCu_2O_x Thin Films
• Preparation and Properties of Ultrathin High-T_c Superconducting Films on Si
• Fabrication of All-High-T_c Josephson Junction Using As-Grown YBa_2Cu_3O_x Thin Films
• Josephson Effect in Wide Superconducting Bridges Made by Epitaxial Ba_2YCu_3O_x Thin Films on YSZ/Si(100)
• Studies on Spread Monolayers and LB Films of Long-Chain Alkylchlorosilanes by Brewster Angle Microscopy and X-Ray Photoelectron Spectroscopy
• Development of a Precisely Temperature-Programmable Langmuir Trough for Measuring Properties of Insoluble Monolayers at the Water Surface as Functions of Temperature
• Hydrogen Formation during Wet Grinding of Alumina and Silicon Carbide
• Spin Relaxation of Electrons in Strained-GaAs-Layer Photocathode of Polarized Electron Source
• Two-Phase Structure of a-Si_N_x:H Fabricated by Microwave Glow-Discharge Technique
• New-Type Photocathode for Polarized Electron Source with Distributed Bragg Reflector
• Quantum Size Effect and HRTEM Observation of CdSe Microcrystallites Doped into SiO_2-Glass Films Prepared by Rf-Sputtering
• EPR Spectra from Ni~ Pairs in KZnF_3 Crystals
• Precipitation in an Al-300ppm Fe Alloy
• A New Method of Measuring Internal Stress in Thin Films Deposited on Silicon by Raman Spectroscopy
• Raman Scattering Study of Tehrmal SiO_2 Layers Grown on Silicon
• Epitaxial Growth of CdTe by H_2 Sputtering : Semiconductors and Semiconductor Devices
• Deposition of Hydrogenated Microcrystalline Films of CdTe by Chemical Sputtering in Hydrogen : Surfaces, Interfaces and Films
• Epitaxial Growth of CdTe on InSb(100) by RF Sputtering
• Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
• Reflectance spectra of BN Materials in the Vacuum Ultraviolet
• Photoluminescence of Si Microcrystals Embedded in Si0_2 Glass Films
• Photoluminescence from Si Network in SiO_2-Doped Si Films
• Appearance of Quasi-Direct Optical Transition from Si Network in SiO_2-Doped Si Films
• Visible Photoluminescence from Si Microcrystals Embedded in SiO_2 Glass Films
• Preparation and Properties of Si Microcrystals Embedded in SiO_2 Glass Films
• Preparation and Properties of Ge Microcrystals Embedded in SiO_2 Glass Films
• Structural Changes of Amorphous GeTe_2 Films by Annealing (Formation of Metastable Crystalline GeTe_2 Films)
• Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
• Determination of Small Amounts of L-Ascorbic Acid Using the Chemiluminescence of an Iron-Chlorophyllin Complex
• Preparation of the High-T_c Superconducting Phase in Bi, Pb-Sr-Ca-Cu-O films by Pyrolysis of 2-Ethylhexanoates : Electrical Properties of Condensed Matter
• Formation of High-T_c Superconducting BiSrCaCu_2O_x Films on ZrO_2/Si(100) : Electrical Properties of Condensed Matter
• preparation of BiSrCaCu_2O_x Films with T_c>77 K by Pyrolysis of Organic Acid Salts : Electrical Properties of Condensed Matter
• DSC Studies of Glassy Behavior in P-Doped a-Si:H : Condensed Matter
• Optical and Mechanical Properties of Hard Hydrogenated Amorphous Carbon Films Deposited by Plasma CVD
• Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers
• Formation and Properties of Cubic Boron Nitride Films on Tungsten Carbide by Plasma Chemical Vapor Deposition
• CuCl Microcrystallite-Doped SiO_2 Glass Thin Films Prepared by RF Sputtering
• Preparation and Properties of In_xGa_As Microcrystallites Embedded in SiO_2 Glass Films
• Evaluation of Epitaxial ZnTe Films Prepared by RF Sputtering by Means of Ion Beam Channeling
• Semiconducting CdTe Microcrystalline-Doped SiO_2 Glass Thin Films Prepared by Rf-Sputtering
• Heteroepitaxial Growth of ZnS_xTe_ on GaAs(100) by RF Sputtering
• Preparation and Crystallization Process of the High-T_c Superconducting Phase (T_c(end)>100 K) in Bi, Pb-Sr-Ca-Cu-O Glass-Ceramics
• Synthesis of Metastable Ge_xSn_ Alloys by Chemical Sputtering in H_2
• Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon : Surfaces, Interfaces and Films
• Characterization of the Structure in Hydrogenated Amorphous Silicon by Means of ^Sn Mossbauer Spectroscopy
• Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
• Effects of Film Thickness and Substrate-Film Interface on the Formation of Metastable Crystalline GeTe_2 from Amorphous GeTe_2 Film
• Preparation and Crystallization Process of High-T_c Superconducting Bi, Pb-Sr-Ca-Cu-O Film (T_c=101 K) by Melt-Quenching and Annealing Techniques
• Current Transport in Doped Polycrystalline Silicon
• Note on Localized States in Amorphous Germanium
• Dynamic Heating in Micron- and Submicron-Patterned TbFe Films
• Magnetic Force Microscopy Study of Thermomagnetic Writing on Micron- and Submicron-Patterned TbFe Films Using Current Pulses
• Effect of Sputtering Deposition Process on Magnetic Properties of Magnetic Multilayers
• Dependences of Giant Magnetoresistance in Co/Cu Multilayers on Sputtering Conditions
• Solitary Bulky Mediastinal Lymph Node Metastasis from Colon Cancer
• Serum Dopamine β-Hydroxylase Activity in Developing Spontaneously Hypertensive Rats and the Effect of Salt Administration

もっと見る 閉じる

スポンサーリンク