New-Type Photocathode for Polarized Electron Source with Distributed Bragg Reflector
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-12-15
著者
-
KISHINO Katsumi
Department of Engineering and Applied Sciences, Sophia University
-
Kishino Katsumi
Department Of Electrical And Electronic Engineering Sophia University
-
堀中 博道
大阪府立大学工学研究科電子物理工学分野
-
OKUMI Shoji
Graduate School of Science, Nagoya University
-
Horinaka Hiromichi
College Of Engineering University Of Osaka Prefecture
-
Saka Takashi
Electrical And Electronics Engineering Daido Institute Of Technology
-
Saka Takashi
New Materials Research Laboratory Daido Steel Co. Ltd.
-
Kato Takayoshi
Reseach Institute Of Electronics Shizuoka University
-
Okumi S
Nagoya Univ. Nagoya Jpn
-
Kato T
Graduate School Of Engineering Nagoya University
-
Aoyagi Hideki
Stanford Linear Accelerator Center Stanford University:(present Address) Nagoya University
-
Aoyagi Hideki
College Of Engineering University Of Osaka Prefecture:(present Address)japan Synchrotron Radiation R
-
Kato Takayoshi
Research Institute Of Electronics Shizuoka University
-
Koshikawa Takanori
Fundamental Electronics Research Institute Academic Frontier Promotion Center Osaka Electro-communic
-
Matsuyama T
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
-
Matsunaka Toshiyuki
Department Of Physics & Electronics Osaka Prefecture University
-
Kato T
Ashikaga Inst. Technol. Tochigi
-
NAKANISHI Tsutomu
Department of Physics, Nagoya University
-
Kato T
Optoelectronics Technology Research Lab. Ibaraki
-
Takahashi Chikako
Department of Cardiovascular Medicine, Tohoku University Graduate School of Medicine
-
Kishino Katsumi
Department Of Electrical Electronics Engineering Sophia University
-
TAWADA Masafumi
Department of Physics, Nagoya University
-
OKUMI Shoji
Department of Physics, Nagoya University
-
TOGAWA Kazuaki
Department of Physics, Nagoya University
-
TSUBATA Mitsuru
Nagoya University
-
Takahashi Chikako
Department Of Cardiovascular Medicine Tohoku University Graduate School Of Medicine
-
Takahashi Chikako
Faculty Of Science Nagoya University
-
Takeuchi Yasunori
Kek National Laboratory For High Energy Physics
-
Matsuyama Tetsuya
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
-
Tawada Masafumi
Department Of Physics Nagoya University:(present Address)kek National Laboratory For High Energy Phy
-
KATO Toshihiro
New Materials Research Laboratory, Daido Steel Co., Ltd.
-
Takeuchi Y
Institute For Materials Research Tohoku University
-
TSUBATA Mitsuru
Department of Physics, Nagoya University
-
KAMIYA Yoshihiro
Toyota Technical Institute
-
TANIMOTO Yasunori
Department of Physics, Nagoya University
-
AOYAGI Hideki
Department of Physics, Nagoya University
-
NAKAMURA Shinsuke
Department of Physics, Nagoya University
-
Togawa Kazuaki
Department Of Physics Faculty Of Science Nagoya University
-
Nakanishi T
Graduate School Of Science Nagoya University
-
Kondo T
Graduate School Of Science Nagoya University
-
Takahashi C
Ntt Telecommunications Energy Laboratories
-
Kurihara Y
Teikyo Heisei Univ. Chiba Jpn
-
Nakamura Shinsuke
Department Of Economics Keio University
-
Nakamura Shinsuke
Department Of Physics Nagoya University:(present) Physikalisches Institut Der Univertitat Bonn
-
Kamiya Y
Kek Ibaraki Jpn
-
Nakanishi Tsutomu
Department Of Mechanical Systems Engineering Faculty Of Engineering Miyazaki University
-
Nakanishi Tsutomu
Department Of Materials Sciences Waseda Universit
-
Okumi Shoji
Department of Physics, Faculty of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
-
Nakanishi Tsutomu
Department of Materials Science and Engineering, Waseda University, Tokyo 169-8555, Japan
-
OKUMI Shoji
Department of Physics, Faculty of Science, Nagoya University
関連論文
- 光アシスト超音波速度変化イメージング法による生体組織診断(第7回赤外放射の応用関連学会年会)
- 22pGL-1 スピン偏極電子ビームによる表面磁区構造変化の動画像観察(22pGL 領域3,領域9合同 表面・界面磁性,領域9(表面・界面,結晶成長))
- 22pGL-1 スピン偏極電子ビームによる表面磁区構造変化の動画像観察(22pGL 領域3,領域9合同 表面・界面磁性,領域3(磁性,磁気共鳴))
- Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns
- 2P5-15 光アシスト超音波速度変化イメージング法による生体組織診断(ポスターセッション)
- 歪み超格子スピン偏極電子源構造におけるバッファ層歪み緩和過程と偏極度の関係(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
- スピン偏極電子源
- 歪んだGaAs薄膜を用いたスピン偏極電子線源
- 新しいスピン偏極電子線源とその応用
- 歪み格子半導体における光励起電子のスピン偏極と緩和
- 偏極電子線陰極格子ＧａＡｓのスピン依存性発光
- 自己相関測定を利用しない簡易な光パルス再構築法
- 2P7a-14 光アシスト超音波速度変化イメージング法による初期癌検出のための基礎的検討(ポスターセッション)
- Super-High Brightness and High-Spin-Polarization Photocathode
- 光吸収による超音波音速変化を利用したイメージング : 生体への応用を目指して
- 光と超音波で断層画像に挑む--医用診断への応用をめざした光アシスト超音波変化映像法 (特集 医用超音波の最新事例)
- 3-03-01 光アシスト超音波速度変化イメージ法を用いた生体中の金ナノ粒子分布モニター(波動伝搬・可視化技術)
- 光アシスト超音波速度変化映像法によるナノ粒子分布モニター
- P1-41 Spectroscopic imaging by using ultrasound velocity change caused by optical absorption(Poster session 1)
- 半導体レーザーの注入変調チャープパルスに対する光ファイバーカップラーを用いたパルス圧縮
- 超音波速度イメージング法による生体の光吸収分布の測定
- 大阪大学 レーザーエネルギー学研究センター レーザーテラヘルツ研究部門萩行・谷研究室
- 超音波速度変化による光吸収イメージング
- 30p-J-7 Stained GaAsによるスピン偏極電子源の開発 II
- 30a-SG-3 GaAs型偏極電子源の開発 I
- P1-61 光照射による超音波速度変化を利用した光散乱媒質の3D光イメージング(ポスターセッション1(概要講演))
- J-2 光アシスト弾性定数イメージング法を用いた組織診断のための基礎実験(医用超音波1)
- P3-18 超音波速度変化イメージング法による光吸収分布の測定(ポスターセッション3,ポスター発表)
- 超音波パルスの速度変化を利用した光トモグラフィ
- 非線形光学効果を用いた生体透過光における準直進光成分の抽出と光断層画像
- 半導体における二光子吸収を利用した赤外超短光パルスの波形モニター
- 歪み超格子スピン偏極電子源構造におけるバッファ層歪み緩和過程と偏極度の関係(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
- 歪み超格子スピン偏極電子源構造におけるバッファ層歪み緩和過程と偏極度の関係(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
- 光応用・視覚技術の動向と最前線
- 幅の異なる量子井戸を有する共鳴キャビティLED
- 光アシスト超音波速度変化イメージング法による内臓脂肪診断装置の開発
- 超音波と光の相互作用を利用した新たな生体トモグラフィ
- D-5 超音波速度画像法による光吸収分布の測定(水中・医用超音波,口頭発表)
- 508 超音波パルスエコーの速度変化を利用した光断層イメージング
- 偏光保存フォトン光CT (特集 光断層画像計測の現状)
- 偏光保存フォトンによる光CT
- 偏光保存フォトンを利用した光CT装置の開発(果実の断層画像の測定)
- 注入変調AlGaAs半導体レーザーにおける戻り光を用いたパルス発振状態の制御
- 散乱媒質透過光における準直進光成分の抽出法と光CTへの応用
- 注入変調半導体レーザーからの倍周期パルス発振の観測
- 注入変調半導体レｰザｰからの倍周期パルス発振の観測
- 偏光解消を利用した散乱媒質透過光における散乱成分の抑制法
- 歪んだGaAs薄膜のスピン緩和時間の測定
- THM法によるCuGaS_2の成長と評価 : 溶液成長III
- ブリッジマン法によるAgGa(S_Se_x)_2の作製とHe-Neレーザー用フィルターへの応用 : 融液成長V
- 歪んだGaAs薄膜を用いたスピン偏極電子線源
- バイオ・生体
- Growth of Self-Organized GaN Nanostructures on Al_20_3(0001)by RF-Radical Source Molecular Beam Epitaxy
- Photoconductivity Decay Characteristics of Undoped p-Type CuGaS_2
- Two-Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
- Substrate Nitridatiorn Effects on GaN Growm on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
- 29a-C-4 Strained GaAs によるスピン偏極電子源の開発V
- 29p-W-9 Strained GaAs によるスピン偏極電子源の開発 IV
- 3P-50 内臓脂肪診断のための超音波速度変化映像法の応用(ポスターセッション)
- Spin-Dependent Luminescence Enhanced by Interface Stress between III-V Alloy Layers on Excitation of Circularly Polarized Light : Optical Properties of Condensed Matter
- Photovoltaic Effect and Luminescences of Al_xGa_Sb Ternary Alloy Semiconductors
- A New Method for Measuring Optical Activity in Crystals and Its Application to Quartz
- Optical Band-Pass Filter Using Accidental Isotropy and Optical Activity of AgGaSe_2
- Composition Deviation and Its Effect on Lattice Constant in Pseudoquaternary Compound Alloy System
- High Excitation Luminescences of Al_xGa_P Compound Alloy
- Piezoelectric Coefficients of AgGaSe_2
- Linear Electro-Optic Effect of AgGaSe_2
- Natural Optical Activity of AgGaSe_2. : CHALCOPYRITES : ELECTRICAL AND OPTICAL PROPERTIES
- Zn Induced Layer Disordering in GaInP/AlInP Visible Multi-Quantum Well Distributed Bragg Reflector Laser Diode
- 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
- Absorption Coefficient Measurements of MgZnCdSe II-VI Compounds on InP Substrates and Quantum Confined Stark Effect in ZnCdSe/MgZnCdSe Multiple Quantum Wells
- Absorption Coefficient Measurements of MgZnCdSe II-VI Compounds on InP Substrates and Quantum Confined Stark Effect in ZnCdSe/MgZnCdSe Multiple Quantum Wells
- Twin-Guide Laser with Narrow Radiation Angle
- Monolithic Integration of Laser and Amplifier/Detector by Twin-Guide Structure
- Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate Layers
- High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
- New-Type Photocathode for Polarized Electron Source with Distributed Bragg Reflector
- CW Operation of 0.67μm GaInAsP/AlGaAs Laser at 208 K Grown on GaAs Substrates by LPE
- Growth and Characterization of ZnCdSe/BeZnTeII-VI Compound Type-II Superlattices on InP Substrates and Their Application for Visible Light Emitting Devices : Semiconductors
- Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy : Semiconductors
- Growth and Characterization of Nitrogen-Doped MgSe/ZnSeTe Superlattice Quasi-Quaternary Oil InP Substrates and Fabrication of Light Emitting Diodes
- Crystal Growth and Characterization of II-VI Compound Light Emitting Diodes with Novel Superlattice Quasi-Quaternary Cladding Layers on InP Substrates
- Substrate Misorientation Effect on Self-Organization of Quantum-Wires in (GaP)m/(InP)m Short Period Binary Superlattices
- Raman Scattering from Interface Phonons in GaInP / AlInP Superlattice
- 600-nm-Range GaInP/AlInP Strained Quantum Well Lasers Grown by Gas Source Molecular Beam Epitaxy
- 600 nm-Range GaInP/AlInP Multi-Quantum-Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GS-MBE)
- 0.67 μm Room-Temperature Operation of GaInAsP/AlGaAs Lasers on GaAs Prepared by LPE
- Selective Meltbacked Substrate Inner-Stripe AlGaAs/GaAs Lasers Operated under Room Temperature CW Condition
- Photopumped Lasing Characteristics in Green-to-Yellow Range for BeZnSeTe II--VI Compound Quaternary Double Heterostructures Grown on InP Substrates
- 1.6 μm Wavelength Buried Heterostructure GaInAsP/InP Lasers
- InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate
- Optically Pumped Green (530-560nm) Stimulated Emissions from InGaN/GaN Multiple-Quantum-Well Triangular-Lattice Nanocolumn Arrays
- 671 nm GaInAsP/AlGaAs Visible DFB Lasers with Ridge-Waveguide Structure Grown by LPE
- Selective-Area Growth of GaN Nanocolumns on Si(111) Substrates Using Nitrided Al Nanopatterns by RF-Plasma-Assisted Molecular-Beam Epitaxy
- Near-Infrared InGaN Nanocolumn Light-Emitting Diodes Operated at 1.46μm
- Confinement of Optical Phonons Observed by Raman Scattering in GaN/AlN Multiple Quantum Disk Nanocolumns
- Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors
- Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors