Photopumped Lasing Characteristics in Green-to-Yellow Range for BeZnSeTe II--VI Compound Quaternary Double Heterostructures Grown on InP Substrates

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The photopumped lasing characteristics of double heterostructures with a BeZnSeTe active layer grown on InP substrates were systematically investigated. Green-to-yellow lasing emissions from 538 to 570 nm were observed at room temperature (RT). The threshold excitation power density ($P_{\text{th}}$) was approximately 30 kW/cm2. From the temperature dependence of $P_{\text{th}}$, stable lasing emissions were obtained up to 353 K. The characteristic temperatures of $P_{\text{th}}$ were 106 to 140 K above RT. The relationship between the threshold gain ($G_{\text{th}}$) and the threshold carrier density ($N_{\text{th}}$) was estimated from the cavity length dependence of $P_{\text{th}}$ and by waveguide analysis. Using the relationship between $G_{\text{th}}$ and $N_{\text{th}}$, the threshold current densities ($J_{\text{th}}$) of electrically pumped BeZnSeTe laser diode structures were calculated to be less than 1.3 kA/cm2. $J_{\text{th}}$ decreases as the lasing wavelength increases from 538 to 570 nm. The above results demonstrate that BeZnSeTe is a promising active-layer material for high-performance green-to-yellow LDs.
2011-03-25