671 nm GaInAsP/AlGaAs Visible DFB Lasers with Ridge-Waveguide Structure Grown by LPE
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概要
- 論文の詳細を見る
A transverse-mode controlled distributed feedback (DFB) GaInAsP/AlGaAs laser with a ridge-waveguide structure emitting at 671 nm in wavelength, fabricated by two-step liquid phase epitaxy was demonstrated for the first time. The third order grating with 2910 Å period on the GaInP guide layer was employed for the light feedback. Fundamental transverse mode operation in TE was observed at the current level more than 1.3 times the threshold. The DFB mode operation in a single longitudinal mode was maintained in the temperature range of 35℃, with a lasing wavelength shift as small as 0.04 nm/deg.
- 社団法人応用物理学会の論文
- 1989-01-20
著者
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Kishino Katsumi
Department Of Electrical And Electronic Engineering Sophia University
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CHONG Te-Ho
Department of Electrical and Electronics Engineering, Sophia University
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Chong Te-ho
Department Of Electrical And Electronics Engineering Sophia University
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