CW Operation of 0.67μm GaInAsP/AlGaAs Laser at 208 K Grown on GaAs Substrates by LPE

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1985-05-20

著者

• KISHINO Katsumi

  Department of Engineering and Applied Sciences, Sophia University

• Kishino Katsumi

  Department Of Electrical And Electronic Engineering Sophia University

• Harada Akinori

  Department Of Electrical And Electronics Engineering Sophia University

• KANEKO Yawara

  Department of Electrical and Electronics, Sophia University

• Kaneko Yawara

  Department Of Electrical And Electronics Engineering Sophia University

関連論文

• Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns
• Growth of Self-Organized GaN Nanostructures on Al_20_3(0001)by RF-Radical Source Molecular Beam Epitaxy
• Two-Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
• Substrate Nitridatiorn Effects on GaN Growm on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
• Zn Induced Layer Disordering in GaInP/AlInP Visible Multi-Quantum Well Distributed Bragg Reflector Laser Diode
• 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
• Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
• Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
• Absorption Coefficient Measurements of MgZnCdSe II-VI Compounds on InP Substrates and Quantum Confined Stark Effect in ZnCdSe/MgZnCdSe Multiple Quantum Wells
• Absorption Coefficient Measurements of MgZnCdSe II-VI Compounds on InP Substrates and Quantum Confined Stark Effect in ZnCdSe/MgZnCdSe Multiple Quantum Wells
• Twin-Guide Laser with Narrow Radiation Angle
• Monolithic Integration of Laser and Amplifier/Detector by Twin-Guide Structure
• Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate Layers
• High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
• New-Type Photocathode for Polarized Electron Source with Distributed Bragg Reflector
• CW Operation of 0.67μm GaInAsP/AlGaAs Laser at 208 K Grown on GaAs Substrates by LPE
• Growth and Characterization of ZnCdSe/BeZnTeII-VI Compound Type-II Superlattices on InP Substrates and Their Application for Visible Light Emitting Devices : Semiconductors
• Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy : Semiconductors
• Growth and Characterization of Nitrogen-Doped MgSe/ZnSeTe Superlattice Quasi-Quaternary Oil InP Substrates and Fabrication of Light Emitting Diodes
• Crystal Growth and Characterization of II-VI Compound Light Emitting Diodes with Novel Superlattice Quasi-Quaternary Cladding Layers on InP Substrates
• Substrate Misorientation Effect on Self-Organization of Quantum-Wires in (GaP)m/(InP)m Short Period Binary Superlattices
• Raman Scattering from Interface Phonons in GaInP / AlInP Superlattice
• 600-nm-Range GaInP/AlInP Strained Quantum Well Lasers Grown by Gas Source Molecular Beam Epitaxy
• 600 nm-Range GaInP/AlInP Multi-Quantum-Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GS-MBE)
• 0.67 μm Room-Temperature Operation of GaInAsP/AlGaAs Lasers on GaAs Prepared by LPE
• Selective Meltbacked Substrate Inner-Stripe AlGaAs/GaAs Lasers Operated under Room Temperature CW Condition
• Photopumped Lasing Characteristics in Green-to-Yellow Range for BeZnSeTe II--VI Compound Quaternary Double Heterostructures Grown on InP Substrates
• 1.6 μm Wavelength Buried Heterostructure GaInAsP/InP Lasers
• InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate
• Optically Pumped Green (530-560nm) Stimulated Emissions from InGaN/GaN Multiple-Quantum-Well Triangular-Lattice Nanocolumn Arrays
• 671 nm GaInAsP/AlGaAs Visible DFB Lasers with Ridge-Waveguide Structure Grown by LPE
• Selective-Area Growth of GaN Nanocolumns on Si(111) Substrates Using Nitrided Al Nanopatterns by RF-Plasma-Assisted Molecular-Beam Epitaxy
• Near-Infrared InGaN Nanocolumn Light-Emitting Diodes Operated at 1.46μm
• Confinement of Optical Phonons Observed by Raman Scattering in GaN/AlN Multiple Quantum Disk Nanocolumns
• Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors
• Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors

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