Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-12-15
著者
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OSAKA Yukio
Department of Electrical Engineering, Hiroshima University
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Kohno Kenji
Department Of Electrical Engineering Hiroshima-denki Institute Of Technology
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Mizuno Hiroyuki
Department of Bacteriology Osaka Dental University
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Mizuno Hiroyuki
Department Of Electrical Engineering Hiroshima Kokusaigakuin University
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KOSHIDA Nobuyoshi
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agri
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Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Tokyo University Of Agricu
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Osaka Yukio
Department Of Electrical Engineering Hiroshima Kokusaigakuin University
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Kohno Kenji
Department Of Electronic And Information Engineering Tokyo University Of Agricuture And Technology
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Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Graduate School Of Eng. To
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Koshida Nobuyoshi
Department Of Electronic And Information Engineering Tokyo University Of Agricuture And Technology
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