A Solid-State Light-Emitting Device Based on Excitations of Ballistic Electrons Generated in Nanocrystalline Porous Polysilicon Films

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It has been demonstrated that a solid-state light-emitting device can be fabricated by field-induced electron drift in nanocrys-talline porous polysilicon (nc-PPS) film and the subsequent excitation of fluorescent materials. The device is composed of a semitransparent thin Au film, an organic fluorescent film, a nc-PPS film, n-type Si substrate, and an ohmic back contact. When a positive bias voltage of higher than 15V is applied to the Au contact, electrons injected into the nc-PPS layer are accelerated towards the outer surface, and then hit a fluorescent film as quasiballistic or hot electrons. This produces uniform visible light emission with the spectra of which coincide well with the original luminescence spectra of the deposited fluorescent material. Observed light emission with the nc-PPS diode is important from the viewpoint of large-area applications. Potential uses of this device are suggested as a silicon-based surface-emitting light source and a vacuumless fiat panel display. [DOI: 10.1143/JJAP.41.2707]
社団法人応用物理学会の論文
2002-04-30