Precise Thermal Characterization of Confined Nanocrystalline Silicon By a 3ω Method
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
-
Kihara T
Osaka Medical Coll. Takatsuki Jpn
-
Kihara T
Department Of Anatomy Osaka Medical College
-
Kihara T
Research & Development Headquarters Yamatake Corporation
-
KIHARA Takashi
Research & Development Headquarters, Yamatake Corporation
-
HARADA Toshihiro
Research & Development Headquarters, Yamatake Corporation
-
KOSHIDA Nobuyoshi
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agri
-
越田 信義
東京農工大 大学院
-
Koshida Nobuyoshi
Faculty Of Technology Tokyo University Of Agriculture And Technology
-
Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Tokyo University Of Agricu
-
Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
-
Koshida Nobuyoshi
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
-
Koshida N
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
-
Harada Toshihiro
Research & Development Headquarters Yamatake Corporation
-
Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Graduate School Of Eng. To
関連論文
- シリコンナノ結晶膜の光電変換効率改善
- 弾道電子面放出型電子源の特性とフラットパネルへの応用
- P3-1 熱誘起ナノ結晶Si超音波源の空中3次元イメージセンサへの応用 : 超音波源の動特性評価(ポスターセッション3(概要講演))
- 多孔質シリコンの表面構造と発光機構
- 7)多孔質シリコンの可視発光 : 研究の現状と技術的可能性(情報ディスプレイ研究会)
- 多孔質シリコンの可視発光 : 研究の現状と技術的可能性 : 情報ディスプレイ
- 多孔質シリコンの可視発光 : 研究の現状と技術的可能性
- 1インチ256×192画素アクティブ駆動型HEED冷陰極HARP撮像板
- アクティブ駆動型HEED冷陰極HARP撮像板の試作(電子管と真空ナノエレクトロニクス及びその評価技術)
- 多孔質シリコンを用いた面放出形コールドカソード : 基本特性と電子放出機構
- シリコンの発光現象
- 30p-Q-7 多孔質シリコンのESR
- バンド構造変化と表面束縛状態の相補的効果
- 27p-ZF-9 ポーラスSiの光物性
- 多孔質シリコンの可視発光
- 多孔質シリコンの可視域発光特性
- Precise Thermal Characterization of Confined Nanocrystalline Silicon by a 3ω Method
- Precise Thermal Characterization of Confined Nanocrystalline Silicon By a 3ω Method
- Ultrasound Emission Characteristics of a Thermally Induced Sound Emitter Employing a Nanocrystalline Silicon Layer
- THE DISTRIBUTION OF RADIOACTIVE CARBON FROM L-[U-^C] TYROSINE IN MICE
- THE DISTRIBUTION OF RADIOACTIVE CARBON FROM L-[SIDE CHAIN-3-^C]TRYPTOPHAN IN MICE
- DISTRIBUTION OF ^3H-CON A AND ^3H-WGA BINDING SITES IN MICE BY IN VITRO WHOLE-BODY AUTORADIOGRAPHY
- Effects of Oxidation on Electronic States and Photoluminescence Properties of Porous Si
- Surface Structures and Photoluminescence Mechanisms of Porous Si
- THE DISTRIBUTION OF RADIOACTIVE CARBON FROM [1-^C]-GALACTOSAMINE IN MICE
- DISTRIBUTION OF N-ACETYL [4,5,6,7,8,9-^C] NEURAMINIC ACID IN MICE STUDIED BY WHOLE-BODY AUTORADIOGRAPHY
- THE DISTRIBUTION OF RADIOACTIVE CARBON FROM [U-^C] GLUCOSAMINE IN MICE
- Autoradiographic Study on the Distribution of Radioactive Fucose in Mice
- Distribution of glucose-6-phosphatase in mice by in vitro whole-body autoradiography
- THE DISTRIBUTION OF [U-^C]FRUCTOSE IN THE MICE STUDIED BY WHOLE-BODY AUTORADIOGRAPHY
- 1-10P-59 熱誘起ナノ結晶シリコン超音波源によるデジタル情報伝送(ポスターセッション 1)
- Tunable Output Directivity of Thermally Induced Ultrasound Generator Based on Nanocrystalline Porous Silicon
- Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emission
- Dynamic Analyses of Thermally Induced Ultrasonic Emission from Nanocrystalline Silicon
- Deep-Level Energy States in Nanostructural Porous Silicon
- Electroluminescence from Deuterium Terminated Porous Silicon
- A technique of whole-body fluorography
- A TECHNIQUE OF AUTORADIOGRAPHY FOR TUBULAR ORGANS
- DISTRIBUTION OF LABELED FUCOSE IN MICE STUDIED BY WHOLE-BODY AND LIGHT MICROSCOPE AUTORADIOGRAPHY
- 多孔質多結晶Siを用いた弾道電子型冷陰極の電子放出特性とPL特性
- 多孔質多結晶Siを用いた弾道電子型冷陰極の電子放出特性とPL特性
- EID2000-12 多孔質多結晶Siを用いた弾道電子型冷陰極の電子放出特性とPL特性
- シリコンベース光共振器・導波路の動作特性 : ポーラスシリコンの高い屈折率制御性を用いた光デバイスの作製
- Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
- 量子サイズナノシリコンの発光と新規機能
- ナノシリコンダイオードからの弾道電子放出 (フィールドエミッションディスプレイ)
- Visible Electroluminescence from Porous Silicon Diodes with Immersed Conducting Polymer Contacts
- 03aB07 ナノシリコンテクノロジーによる光・電子・音響機能集積(光・電子集積回路(OEIC)時代をひらく結晶成長技術,ナノ・エピ分科会シンポジウム,第36回結晶成長国内会議)
- Transient and Stationary Characteristics of Thermally Induced Ultrasonic Emission from Nanocrystalline Porous Silicon
- Transient and Stationary Characteristics of Thermally Induced Ultrasonic Emission from Nanocrystalline Porous Silicon
- Photoluminescence from Deuterium Terminated Porous Silicon
- Optical Cavity Based on Porous Silicon Superlattice Technology
- Cold Electron Emission from Electroluminescent Porous Silicon Diodes
- The Relatiornship between Photoconduction Effects and Luminescent Properties of Porous Silicon
- Evidence of Homogeneously Broadened Spectra in the Visible Photoluminescence of Porous Silicon
- Visible Photoluminescence of Porous Si and Its Related Optical Properties
- Quick Response Observed in Solid-State Electrochromic Device with an Interfacial Barrier Structure
- ナノ結晶シリコン電子源の新しい応用展開
- ナノ結晶シリコンフィールドエミッションディスプレイデバイス
- 映像・音響技術におけるナノテクノロジー : 量子サイズ領域で拓かれるシリコンの新しい可能性(映像情報メディアにおけるナノテクノロジー)
- JABEEに関する状況報告
- Electrical Properties of Nanometer-Width Refractory Metal Lines Fabricated by Focused Ion Beam and Oxide Resists
- 50-nm Metal Line Fabrication by Focused Ion Beam and Oxide Resists : Focused Ion Beam Process
- 50-nm Metal Line Fabrication by Focused Ion Beam and Oxide Resists
- Focused Ion Beam Fabrication of Fine Metal Structures by Oxide Resists : Beam-Induced Physics and Chemistry
- Focused Ion Beam Fabrication of Fine Metal Structures by Oxide Resists
- Dual Function of Thin MoO_3 and WO_3 Films as Negative and Positive Resists for Focused Ion Beam Lithography
- A Solid-State Multicolor Light-Emitting Device Based on Ballistic Electron Excitation
- Properties of a Microchannel Plate Operatedin the Reflection Mode as an Energy- and Angle-Resolved Detector for Low-Energy Positive Ions
- Radiative Transition with Visible Light in Electrochemical Anodized Polycrystalline Silicon
- Effects of Anodization Current Density on Photoluminescence Properties of Porous Silicon
- 1)光インタカレーション効果とその情報入力デバイスへの応用(情報入力研究会)
- A Solid-State Light-Emitting Device Based on Excitations of Ballistic Electrons Generated in Nanocrystalline Porous Polysilicon Films
- 光インターカレーション効果とその情報入力デバイスへの応用
- A Solid-State Light-Emitting Device Based on Excitations of Ballistic Electrons Generated in Nanocrystalline Porous Poly-Silicon Films
- 低エネルギー正イオンに対するマイクロチャンネルプレートの反射形動作特性
- アモルファス三酸化モリブデン薄膜のイオンレジスト効果
- アモルファスWO3薄膜のイオンビームレジスト効果
- Fabrication of Periodic Si Nanostructure by Controlled Anodization
- Significant Reduction of Phonon Scattering Potential in 1D Si Quantum Dot Array Interconnected with Thin Oxide Layers
- Porous Silicon Optical Waveguides with an Extremely High Contrast of Refractive Index
- Photoelectrochemical Behavior of n-Type Porous-Si Electrodes
- ナノシリコンの発光と新機能
- Negative-Resistance Effects in Light-Emitting Porous Silicon Diodes
- Function of Porous Silicon Diode as a Light-Emitting Bistable Memory
- Negative-Resistance Effects in Light-Emitting Porous Silicon Diodes
- ポーラスシリコンの発光 - 間接・直接遷移の枠を超えて -
- シリコンによる光電子集積を目指して
- Focused Ion Beam Lithography with Transition Metal Oxide Resists : Lithography Technology
- 低エネルギー正イオンに対するマイクロチャンネルプレートの利得
- Buried Optical Waveguides of Porous Silicon
- 光インターカレーション効果によるWO_3薄膜の光学的・電気的特性変化
- Observation of a Long-Life Photoelectrochemical Conversion with n-Type Porous-Si Photoelectrodes
- An Evidence for Ballistic Transport in Nanocrystalline Porous Silicon Layer by Time-of-Flight Measurements
- マイクロチャンネルプレートの出力電子エネルギー分布
- 23-3 アクティブ駆動型HEED冷陰極HARP撮像板の試作(第23部門 イメージセンサII)
- 23-2 アクティブ駆動方式256×192画素冷陰極HEEDと撮像カメラへの応用(第23部門 イメージセンサII)
- 13-5 シリコンナノ結晶膜の光電変換効率改善(第13部門 情報センシング)
- MCPの出力電子エネルギー分布 : 出力端電極構造の影響(画像変換装置)
- Precise Thermal Characterization of Confined Nanocrystalline Silicon by a $3\omega$ Method