Observation of a Long-Life Photoelectrochemical Conversion with n-Type Porous-Si Photoelectrodes
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概要
- 論文の詳細を見る
Application of an n-type porous-Si layer (PSL) as a working electrode of a photoelectrochemical cell was investigated. The introduction of the porous structure produced a drastic improvement in the life of n-Si under photoanodic operation. A linear relationship between the total output charge and the PSL thickness was found. At a PSL thickness of 20μm, the photoanode remained alive until several C / cm^2 charges were passed; this was three orders of magnitude more than was obtained from naked n-Si photoanodes. The H_2 evolution rate from Pt counterelectrode was then about 100μmol/10 h. The prolonged operation is closely related to an enhanced active area.
- 社団法人応用物理学会の論文
- 1985-03-20
著者
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Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Tokyo University Of Agricu
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Kiuchi Yuji
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture And Techn
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Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Graduate School Of Eng. To
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Koshida Nobuyoshi
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture And Techn
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