Fabrication and Optical Characterization of Self-Standing Wide-Gap Nanocrystalline Silicon Layers
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概要
- 論文の詳細を見る
The fabrication of self-standing thin layers of nanocrystalline silicon to use as a top-cell in multijunction silicon-based solar cells has been investigated. Study on the effects of different oxidation processes such as rapid thermal oxidation (RTO) and high-pressure water vapor annealing (HWA) on the optical characteristics has also been carried out. Samples treated with a combination of RTO and HWA feature particularly interesting photonic features such as efficient and stable blue photoluminescence as well as a blue shift of the absorption edge corresponding to a widening of the band gap due to quantum confinement in nanodots of silicon. Such interesting properties are expected to lead to potential application in the photovoltaic field.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-04-25
著者
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GELLOZ Bernard
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agri
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Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Graduate School Of Eng. To
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Nobuyoshi Koshida
Department of Electronic and Information Engineering, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan
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Mentek Romain
Department of Electronic and Information Engineering, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan
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Romain Mentek
Department of Electronic and Information Engineering, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan
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Bernard Gelloz
Department of Electronic and Information Engineering, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan
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Gelloz Bernard
Department of Applied Physics, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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