Quick Response Observed in Solid-State Electrochromic Device with Interfacial Barrier Structure
スポンサーリンク
概要
- 論文の詳細を見る
A novel structure is proposed for a solid-state electrochromic (EC) device to improve its dynamic response. The proposed device is composed of an indium–tin-oxide (ITO)-coated glass substrate, an amorphous thin WO3 film, a very thin SiO2 film, an electrolytic thin Ta2O5 film, and a semitransparent top electrode. The experimental results show that the EC response significantly improves compared with the conventional device with no SiO2 films, and that the response time decreases to 100 ms at a bias voltage of 3 V. This value is close to a practical level for actual applications. This improvement is interpreted to be a result of carrier accumulation produced by the SiO2 film followed by an increase in the proton generation rate leading to fast EC coloration. The observed quick response is also discussed in relation to the EC efficiency. The charge accumulation approach is very useful for development of a fast and reliable solid-state EC device.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
-
Yoshimura Hideo
Department Of Clinical Pathology Osaka University Medical School
-
Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Graduate School Of Eng. To
-
Koshida Nobuyoshi
Department of Electronic and Information Engineering, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-Cho, Koganei, Tokyo 184-8588, Japan
関連論文
- Precise Thermal Characterization of Confined Nanocrystalline Silicon By a 3ω Method
- Ultrasound Emission Characteristics of a Thermally Induced Sound Emitter Employing a Nanocrystalline Silicon Layer
- Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emission
- Dynamic Analyses of Thermally Induced Ultrasonic Emission from Nanocrystalline Silicon
- Deep-Level Energy States in Nanostructural Porous Silicon
- Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
- Transient and Stationary Characteristics of Thermally Induced Ultrasonic Emission from Nanocrystalline Porous Silicon
- Transient and Stationary Characteristics of Thermally Induced Ultrasonic Emission from Nanocrystalline Porous Silicon
- Evidence of Homogeneously Broadened Spectra in the Visible Photoluminescence of Porous Silicon
- Phyllodes Tumor in Epileptics : A Report of Two Cases
- Preoperative Diagnosis of Thyroid Carcinomas by Aspiration Biopsy-Reverse Transcription-Polymerase Chain Reaction (ABRP): A Report of Two Cases
- Quick Response Observed in Solid-State Electrochromic Device with an Interfacial Barrier Structure
- Properties of a Microchannel Plate Operatedin the Reflection Mode as an Energy- and Angle-Resolved Detector for Low-Energy Positive Ions
- A Solid-State Light-Emitting Device Based on Excitations of Ballistic Electrons Generated in Nanocrystalline Porous Polysilicon Films
- A Solid-State Light-Emitting Device Based on Excitations of Ballistic Electrons Generated in Nanocrystalline Porous Poly-Silicon Films
- Porous Silicon Optical Waveguides with an Extremely High Contrast of Refractive Index
- Photoelectrochemical Behavior of n-Type Porous-Si Electrodes
- Buried Optical Waveguides of Porous Silicon
- Observation of a Long-Life Photoelectrochemical Conversion with n-Type Porous-Si Photoelectrodes
- An Evidence for Ballistic Transport in Nanocrystalline Porous Silicon Layer by Time-of-Flight Measurements
- Secondary Electron Emission from Polyvinylidene Fluoride (PVDF) Film
- Observation of an Insulator-Metal Transition with Na^+-Irradiated Amorphous MoO_3 Films
- Empirical Relation between Transition Temperature and Work Function in Elemental Superconductors
- Mechanism of a High-Contrast Inorganic Ion Resist Using Amorphous WO_3
- Ion-Beam Modification of Amorphous WO_3 Film and Its Properties as a High-Contrast Inorganic Ion Resist
- A Solid-State Multicolor Light-Emitting Device Based on Ballistic Electron Excitation
- Characteristics of Light Emission by Ballistic Electron Excitation in Nanocrystalline Silicon Device Formed on a p-Type Substrate
- Effect of Bilayer Structure on the Long-Term Stability of Nanocrystalline Porous Silicon Ultrasonic Emitter
- Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emission
- Evidence of Enlarged Drift Length in Nanocrystalline Porous Silicon Layers by Time-of-Flight Measurements
- Analysis of Electron Transport in Surface-Passivated Nanocrystalline Porous Silicon
- Tunable Output Directivity of Thermally Induced Ultrasound Generator Based on Nanocrystalline Porous Silicon
- Fabrication and Optical Characterization of Self-Standing Wide-Gap Nanocrystalline Silicon Layers
- Characteristics of Thermally Induced Ultrasonic Emission from Nanocrystalline Porous Silicon Device under Impulse Operation
- Quick Response Observed in Solid-State Electrochromic Device with Interfacial Barrier Structure
- Generation of Radiation Pressure in Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Silicon
- Development of Flexible Electrochromic Device with Thin-Film Configuration
- High Performance Electroluminescence from Nanocrystalline Silicon with Carbon Buffer