Generation of Radiation Pressure in Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Silicon
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概要
- 論文の詳細を見る
To confirm the applicability of thermally induced ultrasonic emission from nanocrystalline silicon (nc-Si) devices as radiation pressure generators, the dynamic response has been investigated under a pulse operation mode. The nc-Si emitter is fabricated on a p-type Si wafer by conventional electrochemical anodization with subsequent formation of the surface electrode. Due to the flat nature of the frequency response of this emitter, the device emits an acoustic wave with little distortion under the pulse-drive condition. It is shown that a significant radiation pressure of 34.5 Pa is generated by a concentrated burst-like electrical input, and that a beam located at a distance can be levitated as a result of the mechanical loading effect. This silicon-based emitter is attractive for applications to integrated nano- or micro-electromechanical systems.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Hirota Jun
Department Of Cardiovascular Surgery Iwaki Kyoritsu General Hospital
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SHINODA Hiroyuki
The University of Tokyo
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Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Graduate School Of Eng. To
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Hirota Jun
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Koshida Nobuyoshi
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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