Evidence of Enlarged Drift Length in Nanocrystalline Porous Silicon Layers by Time-of-Flight Measurements
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概要
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The electron transport mechanism of nanocrystalline porous silicon (PS) has been studied for a self-supporting PS layer by a time-of-flight (TOF) measurement. The observed TOF transient photocurrent curves are different from those of both single crystalline silicon (c-Si) and amorphous silicon (a-Si). On the basis of the mobility-lifetime product ($\mu\tau$) deduced from TOF measurements, it is shown that the electron drift length of PS is enhanced up to 3.8 $\mu$m at 100 K and 2.6 $\mu$m at 300 K.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-30
著者
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Kojima Akira
Department Of Chemical And Materials Science Gunma National College Of Technology
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Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Graduate School Of Eng. To
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Koshida Nobuyoshi
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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