Observation of an Insulator-Metal Transition with Na^+-Irradiated Amorphous MoO_3 Films
スポンサーリンク
概要
- 論文の詳細を見る
It is shown that the electrical and optical properties of thin amorphous MoO_3 films significantly change upon sodium ion irradiation at about 10 kV and that an insulator-metal transition occurs at fluences near 10^<16> cm^<-2>. These results may be caused either by an electrical activation of the implants or by some compositional change as a result of a sputtering effect.
- 社団法人応用物理学会の論文
- 1987-09-20
著者
-
Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Graduate School Of Eng. To
-
Koshida Nobuyoshi
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture And Techn
-
IKETSU Yuichi
Department of Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Tec
-
Iketsu Yuichi
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture And Techn
関連論文
- Precise Thermal Characterization of Confined Nanocrystalline Silicon By a 3ω Method
- Ultrasound Emission Characteristics of a Thermally Induced Sound Emitter Employing a Nanocrystalline Silicon Layer
- Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emission
- Dynamic Analyses of Thermally Induced Ultrasonic Emission from Nanocrystalline Silicon
- Deep-Level Energy States in Nanostructural Porous Silicon
- Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
- Transient and Stationary Characteristics of Thermally Induced Ultrasonic Emission from Nanocrystalline Porous Silicon
- Transient and Stationary Characteristics of Thermally Induced Ultrasonic Emission from Nanocrystalline Porous Silicon
- Evidence of Homogeneously Broadened Spectra in the Visible Photoluminescence of Porous Silicon
- Quick Response Observed in Solid-State Electrochromic Device with an Interfacial Barrier Structure
- Properties of a Microchannel Plate Operatedin the Reflection Mode as an Energy- and Angle-Resolved Detector for Low-Energy Positive Ions
- A Solid-State Light-Emitting Device Based on Excitations of Ballistic Electrons Generated in Nanocrystalline Porous Polysilicon Films
- A Solid-State Light-Emitting Device Based on Excitations of Ballistic Electrons Generated in Nanocrystalline Porous Poly-Silicon Films
- Porous Silicon Optical Waveguides with an Extremely High Contrast of Refractive Index
- Photoelectrochemical Behavior of n-Type Porous-Si Electrodes
- Buried Optical Waveguides of Porous Silicon
- Observation of a Long-Life Photoelectrochemical Conversion with n-Type Porous-Si Photoelectrodes
- An Evidence for Ballistic Transport in Nanocrystalline Porous Silicon Layer by Time-of-Flight Measurements
- Secondary Electron Emission from Polyvinylidene Fluoride (PVDF) Film
- Observation of an Insulator-Metal Transition with Na^+-Irradiated Amorphous MoO_3 Films
- Empirical Relation between Transition Temperature and Work Function in Elemental Superconductors
- Mechanism of a High-Contrast Inorganic Ion Resist Using Amorphous WO_3
- Ion-Beam Modification of Amorphous WO_3 Film and Its Properties as a High-Contrast Inorganic Ion Resist
- A Solid-State Multicolor Light-Emitting Device Based on Ballistic Electron Excitation
- Characteristics of Light Emission by Ballistic Electron Excitation in Nanocrystalline Silicon Device Formed on a p-Type Substrate
- Effect of Bilayer Structure on the Long-Term Stability of Nanocrystalline Porous Silicon Ultrasonic Emitter
- Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emission
- Evidence of Enlarged Drift Length in Nanocrystalline Porous Silicon Layers by Time-of-Flight Measurements
- Analysis of Electron Transport in Surface-Passivated Nanocrystalline Porous Silicon
- Tunable Output Directivity of Thermally Induced Ultrasound Generator Based on Nanocrystalline Porous Silicon
- Fabrication and Optical Characterization of Self-Standing Wide-Gap Nanocrystalline Silicon Layers
- Characteristics of Thermally Induced Ultrasonic Emission from Nanocrystalline Porous Silicon Device under Impulse Operation
- Quick Response Observed in Solid-State Electrochromic Device with Interfacial Barrier Structure
- Generation of Radiation Pressure in Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Silicon
- Development of Flexible Electrochromic Device with Thin-Film Configuration
- High Performance Electroluminescence from Nanocrystalline Silicon with Carbon Buffer