Photoelectrochemical Behavior of n-Type Porous-Si Electrodes
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概要
- 論文の詳細を見る
A prolonged photoanodic operation of n-type Si in aqueous electrolytes was observed with porous-structure Si electrodes. The n-type porous-Si layers (n-PSL) were formed on n-Si substrates (1-2 Ωcm in resistivity) by anodic treatments in an HF solution. The total output charge Q obtainable from a n-PSL photoelectrochemical cell increased in proportion to the n-PSL thickness d. At d= 50 μm, Q reached 12.5 C / cm^2; this was four orders of magnitude greater than was obtained from naked n-Si photoanodes. The H_2 evolution rate from the Pt counterelectrode was about 60 μmol/2 h at d= 30 μm. The experimental results of the spectral response suggest an increase in the surface state density of the n-PSL surface with increasing d.
- 社団法人応用物理学会の論文
- 1986-07-20
著者
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Koyama Hideki
Deparment Of Oral Pathology School Of Dentistry Health Sciences University Of Hokkaido
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Koyama H
Waseda Univ. Tokyo Jpn
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Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Tokyo University Of Agricu
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Koyama Hideki
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture And Techn
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Kiuchi Yuji
Center Of Pharmaceutical Education School Of Pharmacy Showa Univ.
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Kiuchi Y
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture And Techn
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Kiuchi Yuji
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture And Techn
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Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Graduate School Of Eng. To
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Koshida Nobuyoshi
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture And Techn
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