Dual Function of Thin MoO_3 and WO_3 Films as Negative and Positive Resists for Focused Ion Beam Lithography
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-06-15
著者
-
Atoda Nobufumi
Laboratory For Advanced Optical Technology National Institute Of Advanced Industrial Science And Tec
-
Atoda N
Sortec Ibaraki Jpn
-
Atoda Nobufumi
Sortec
-
KOSHIDA Nobuyoshi
Faculty of Technology, Tokyo University of Agriculture and Technology
-
越田 信義
東京農工大 大学院
-
Koshida Nobuyoshi
Faculty Of Technology Tokyo University Of Agriculture And Technology
-
Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Tokyo University Of Agricu
-
Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
-
Koshida Nobuyoshi
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
-
KOMURO Masanori
Electrotechnical Laboratory
-
Komuro M
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
-
WATANUKI Shinichi
Faculty of Technology, Tokyo Univer.sity of Agriculture and Technology
-
Koshida N
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
-
HASHIMOTO Masahiro
Faculty of Technology, Tokyo University of Agriculture and Technology
-
Hashimoto Masahiro
Faculty Of Technology Tokyo University Of Agriculture And Technology
-
Hashimoto Masahiro
Faculty Of Engineering Tokyo Institute Of Technology
-
Watanuki Shinichi
Faculty Of Technology Tokyo University Of Agriculture And Technology
関連論文
- シリコンナノ結晶膜の光電変換効率改善
- 弾道電子面放出型電子源の特性とフラットパネルへの応用
- P3-1 熱誘起ナノ結晶Si超音波源の空中3次元イメージセンサへの応用 : 超音波源の動特性評価(ポスターセッション3(概要講演))
- 多孔質シリコンの表面構造と発光機構
- 7)多孔質シリコンの可視発光 : 研究の現状と技術的可能性(情報ディスプレイ研究会)
- 多孔質シリコンの可視発光 : 研究の現状と技術的可能性 : 情報ディスプレイ
- 多孔質シリコンの可視発光 : 研究の現状と技術的可能性
- 1インチ256×192画素アクティブ駆動型HEED冷陰極HARP撮像板
- アクティブ駆動型HEED冷陰極HARP撮像板の試作(電子管と真空ナノエレクトロニクス及びその評価技術)
- Super-Resolution Near-Field Structure and Signal Enhancement by Surface Plasmons
- 多孔質シリコンを用いた面放出形コールドカソード : 基本特性と電子放出機構
- シリコンの発光現象
- 30p-Q-7 多孔質シリコンのESR
- バンド構造変化と表面束縛状態の相補的効果
- 27p-ZF-9 ポーラスSiの光物性
- 多孔質シリコンの可視発光
- 多孔質シリコンの可視域発光特性
- Precise Thermal Characterization of Confined Nanocrystalline Silicon By a 3ω Method
- Ultrasound Emission Characteristics of a Thermally Induced Sound Emitter Employing a Nanocrystalline Silicon Layer
- Effects of Oxidation on Electronic States and Photoluminescence Properties of Porous Si
- Surface Structures and Photoluminescence Mechanisms of Porous Si
- Electroplated Reflection Masks for Soft X-Ray Projection Lithography
- Resist Performance in 5 nm Soft X-Ray Projection Lithography
- Reduction Imaging at 4.5 nm with Schwarzschild Optics
- Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
- Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
- Spectroscopic Investigation of AgO_x Films for Super Resolution Near Field Structure Application
- Antimony Aperture Properties on Super-Resolution Near-Field Structure using Different Protection Layers
- The Near-Field Super-Resolution Properties of an Antimony Thin Film
- Thermal Lithography for 100-nm Dimensions Using a Nano-Heat Spot of a Visible Laser Beam : Instrumentation, Measurement, and Fabrication Technology
- 1-10P-59 熱誘起ナノ結晶シリコン超音波源によるデジタル情報伝送(ポスターセッション 1)
- Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emission
- Dynamic Analyses of Thermally Induced Ultrasonic Emission from Nanocrystalline Silicon
- Deep-Level Energy States in Nanostructural Porous Silicon
- Electroluminescence from Deuterium Terminated Porous Silicon
- 多孔質多結晶Siを用いた弾道電子型冷陰極の電子放出特性とPL特性
- 多孔質多結晶Siを用いた弾道電子型冷陰極の電子放出特性とPL特性
- EID2000-12 多孔質多結晶Siを用いた弾道電子型冷陰極の電子放出特性とPL特性
- シリコンベース光共振器・導波路の動作特性 : ポーラスシリコンの高い屈折率制御性を用いた光デバイスの作製
- Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
- 量子サイズナノシリコンの発光と新規機能
- ナノシリコンダイオードからの弾道電子放出 (フィールドエミッションディスプレイ)
- Analysis of Deformation of X-Ray Mask Membrane in Aligner Motion
- 03aB07 ナノシリコンテクノロジーによる光・電子・音響機能集積(光・電子集積回路(OEIC)時代をひらく結晶成長技術,ナノ・エピ分科会シンポジウム,第36回結晶成長国内会議)
- Transient and Stationary Characteristics of Thermally Induced Ultrasonic Emission from Nanocrystalline Porous Silicon
- Transient and Stationary Characteristics of Thermally Induced Ultrasonic Emission from Nanocrystalline Porous Silicon
- Effect of Helium Gas Pressure on X-Ray Mask Heating during Synchrotron Radiation Exposure
- Photoluminescence from Deuterium Terminated Porous Silicon
- High-Speed Optical Near-Field Photolithography by Super Resolution Near-Field Structure
- Optical Cavity Based on Porous Silicon Superlattice Technology
- Cold Electron Emission from Electroluminescent Porous Silicon Diodes
- The Relatiornship between Photoconduction Effects and Luminescent Properties of Porous Silicon
- Evidence of Homogeneously Broadened Spectra in the Visible Photoluminescence of Porous Silicon
- Visible Photoluminescence of Porous Si and Its Related Optical Properties
- Improvement of Super-RENS MO Disk Characteristics by Optimized Super-Resolution Near-Field Structure
- Super-Resolution Readout Using a Silver Scattering Center with Plasmon Excitation Generated in a Non-Magnetic Readout Layer
- Magneto-Optical Characteristics Enhanced by Super Resolution Near Field Structure
- The Effects of Metal-Doped GeSbTe Films on Light Scattering-Mode Super-Resolution Near-Field Structure (Super-RENS)
- Near-Field Optical Simulation of Super-Resolution Near-Field Structure Disks
- Oxygen Doping Effects on Super-resolution Scattering-mode Near-field Optical Data Storage
- A Near-Field Recording and Readout Technology Using a Metallic Probe in an Optical Disk
- The Characteristics and the Potential of Super Resolution Near-Field Structure
- Double Optical Phase Transition of GeSbTe Thin Films Sandwiched between Two SiN Layers
- Quick Response Observed in Solid-State Electrochromic Device with an Interfacial Barrier Structure
- ナノ結晶シリコン電子源の新しい応用展開
- ナノ結晶シリコンフィールドエミッションディスプレイデバイス
- 映像・音響技術におけるナノテクノロジー : 量子サイズ領域で拓かれるシリコンの新しい可能性(映像情報メディアにおけるナノテクノロジー)
- JABEEに関する状況報告
- Electrical Properties of Nanometer-Width Refractory Metal Lines Fabricated by Focused Ion Beam and Oxide Resists
- 50-nm Metal Line Fabrication by Focused Ion Beam and Oxide Resists : Focused Ion Beam Process
- 50-nm Metal Line Fabrication by Focused Ion Beam and Oxide Resists
- Focused Ion Beam Fabrication of Fine Metal Structures by Oxide Resists : Beam-Induced Physics and Chemistry
- Focused Ion Beam Fabrication of Fine Metal Structures by Oxide Resists
- Mechanism of Resist Pattern Collapse during Development Process
- Dual Function of Thin MoO_3 and WO_3 Films as Negative and Positive Resists for Focused Ion Beam Lithography
- Properties of a Microchannel Plate Operatedin the Reflection Mode as an Energy- and Angle-Resolved Detector for Low-Energy Positive Ions
- Effects of Anodization Current Density on Photoluminescence Properties of Porous Silicon
- 1)光インタカレーション効果とその情報入力デバイスへの応用(情報入力研究会)
- A Solid-State Light-Emitting Device Based on Excitations of Ballistic Electrons Generated in Nanocrystalline Porous Polysilicon Films
- 光インターカレーション効果とその情報入力デバイスへの応用
- A Solid-State Light-Emitting Device Based on Excitations of Ballistic Electrons Generated in Nanocrystalline Porous Poly-Silicon Films
- 低エネルギー正イオンに対するマイクロチャンネルプレートの反射形動作特性
- アモルファス三酸化モリブデン薄膜のイオンレジスト効果
- アモルファスWO3薄膜のイオンビームレジスト効果
- Porous Silicon Optical Waveguides with an Extremely High Contrast of Refractive Index
- Photoelectrochemical Behavior of n-Type Porous-Si Electrodes
- ナノシリコンの発光と新機能
- ポーラスシリコンの発光 - 間接・直接遷移の枠を超えて -
- シリコンによる光電子集積を目指して
- Focused Ion Beam Lithography with Transition Metal Oxide Resists : Lithography Technology
- 低エネルギー正イオンに対するマイクロチャンネルプレートの利得
- Buried Optical Waveguides of Porous Silicon
- 光インターカレーション効果によるWO_3薄膜の光学的・電気的特性変化
- Observation of a Long-Life Photoelectrochemical Conversion with n-Type Porous-Si Photoelectrodes
- An Evidence for Ballistic Transport in Nanocrystalline Porous Silicon Layer by Time-of-Flight Measurements
- マイクロチャンネルプレートの出力電子エネルギー分布
- 23-3 アクティブ駆動型HEED冷陰極HARP撮像板の試作(第23部門 イメージセンサII)
- 23-2 アクティブ駆動方式256×192画素冷陰極HEEDと撮像カメラへの応用(第23部門 イメージセンサII)
- 13-5 シリコンナノ結晶膜の光電変換効率改善(第13部門 情報センシング)
- MCPの出力電子エネルギー分布 : 出力端電極構造の影響(画像変換装置)