Development of Flexible Electrochromic Device with Thin-Film Configuration
スポンサーリンク
概要
- 論文の詳細を見る
As we reported previously, the carrier accumulation mechanism is very useful for obtaining a quick-response electrochromic (EC) device with the inorganic-thin-film configuration. To confirm the availability of this concept for flexible substrates, the EC device has been fabricated on a polymeric film. The device is composed of a top semitransparent electrode, an electrolytic thin Ta2O5 film, a very thin SiO2 film, a thin amorphous WO3 film, and an indium–tin-oxide-coated poly(ethylene terephthalate) (PET) film. The experimental results show that the insertion of thin SiO2 film significantly accelerates the EC coloration as in the case of glass substrates. In accordance with cyclic voltammogram analyses, the enhanced EC kinetics is associated with an increased EC efficiency owing to the carrier accumulation effect of thin SiO2 film. The present result is potentially useful for development of flexible paper-like EC display devices and simple optical control systems.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
-
SAKAGUCHI Tomonori
Department of Biochemistry, Kumamoto University Medical School
-
Yoshimura Hideo
Department Of Clinical Pathology Osaka University Medical School
-
Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Graduate School Of Eng. To
-
Sakaguchi Tomonori
Department of Electronic and Information Engineering, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
関連論文
- Precise Thermal Characterization of Confined Nanocrystalline Silicon By a 3ω Method
- Ultrasound Emission Characteristics of a Thermally Induced Sound Emitter Employing a Nanocrystalline Silicon Layer
- Human CC chemokine liver-expressed chemokine/CCL16 is a functional ligand for CCR1, CCR2 and CCR5, and constitutively expressed by hepatocytes
- Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emission
- Dynamic Analyses of Thermally Induced Ultrasonic Emission from Nanocrystalline Silicon
- Deep-Level Energy States in Nanostructural Porous Silicon
- Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
- Transient and Stationary Characteristics of Thermally Induced Ultrasonic Emission from Nanocrystalline Porous Silicon
- Transient and Stationary Characteristics of Thermally Induced Ultrasonic Emission from Nanocrystalline Porous Silicon
- Evidence of Homogeneously Broadened Spectra in the Visible Photoluminescence of Porous Silicon
- Phyllodes Tumor in Epileptics : A Report of Two Cases
- Preoperative Diagnosis of Thyroid Carcinomas by Aspiration Biopsy-Reverse Transcription-Polymerase Chain Reaction (ABRP): A Report of Two Cases
- Quick Response Observed in Solid-State Electrochromic Device with an Interfacial Barrier Structure
- Properties of a Microchannel Plate Operatedin the Reflection Mode as an Energy- and Angle-Resolved Detector for Low-Energy Positive Ions
- A Solid-State Light-Emitting Device Based on Excitations of Ballistic Electrons Generated in Nanocrystalline Porous Polysilicon Films
- A Solid-State Light-Emitting Device Based on Excitations of Ballistic Electrons Generated in Nanocrystalline Porous Poly-Silicon Films
- Porous Silicon Optical Waveguides with an Extremely High Contrast of Refractive Index
- Photoelectrochemical Behavior of n-Type Porous-Si Electrodes
- Buried Optical Waveguides of Porous Silicon
- Observation of a Long-Life Photoelectrochemical Conversion with n-Type Porous-Si Photoelectrodes
- An Evidence for Ballistic Transport in Nanocrystalline Porous Silicon Layer by Time-of-Flight Measurements
- Secondary Electron Emission from Polyvinylidene Fluoride (PVDF) Film
- Observation of an Insulator-Metal Transition with Na^+-Irradiated Amorphous MoO_3 Films
- Empirical Relation between Transition Temperature and Work Function in Elemental Superconductors
- Mechanism of a High-Contrast Inorganic Ion Resist Using Amorphous WO_3
- Ion-Beam Modification of Amorphous WO_3 Film and Its Properties as a High-Contrast Inorganic Ion Resist
- A Solid-State Multicolor Light-Emitting Device Based on Ballistic Electron Excitation
- Characteristics of Light Emission by Ballistic Electron Excitation in Nanocrystalline Silicon Device Formed on a p-Type Substrate
- Effect of Bilayer Structure on the Long-Term Stability of Nanocrystalline Porous Silicon Ultrasonic Emitter
- Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emission
- Evidence of Enlarged Drift Length in Nanocrystalline Porous Silicon Layers by Time-of-Flight Measurements
- Analysis of Electron Transport in Surface-Passivated Nanocrystalline Porous Silicon
- Tunable Output Directivity of Thermally Induced Ultrasound Generator Based on Nanocrystalline Porous Silicon
- Fabrication and Optical Characterization of Self-Standing Wide-Gap Nanocrystalline Silicon Layers
- Characteristics of Thermally Induced Ultrasonic Emission from Nanocrystalline Porous Silicon Device under Impulse Operation
- Quick Response Observed in Solid-State Electrochromic Device with Interfacial Barrier Structure
- Generation of Radiation Pressure in Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Silicon
- Development of Flexible Electrochromic Device with Thin-Film Configuration
- High Performance Electroluminescence from Nanocrystalline Silicon with Carbon Buffer