High Performance Electroluminescence from Nanocrystalline Silicon with Carbon Buffer
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概要
- 論文の詳細を見る
Efficient electroluminescence (EL) is obtained at low voltages (3 V) from n+-type silicon/electrochemically oxidized thin nanocrystalline porous silicon (PS)/amorphous carbon/indium tin oxide (ITO) junctions. The carbon film acts as an efficient mechanical and electrical buffer layer between PS and ITO. As a result, the efficiency, stability and reproducibility are markedly enhanced. High efficiency and high brightness have been made possible at low voltages. A diode exhibiting top performance in several parameters has been obtained. A brightness of 3 Cd/m2 has been achieved at 3 V for an external power efficiency of 0.35%. For the first time, voltage-tunable one-peak EL spectra have been obtained. This phenomenon originates from the EL excitation mechanism and the diode high efficiency at low voltages. The EL stability is also enhanced due to the capping function of the carbon film, and the high chemical stability of carbon and Si-C bonds.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Graduate School Of Eng. To
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Koshida Nobuyoshi
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Gelloz Bernard
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Gelloz Bernard
Department of Applied Physics, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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