Analysis of Electron Transport in Surface-Passivated Nanocrystalline Porous Silicon
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概要
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The electron transport mechanism in a quantum-sized silicon system has been studied for a structure- and surface-controlled nanocrystalline porous silicon (nc-PS) sample by a time-of-flight (TOF) measurement using a picosecond UV laser pulse. From observed characteristic TOF signals, we have obtained the drift velocity of the electrons in nc-PS as a function of the electric field. Unlike in single-crystalline silicon (c-Si), the drift velocity in nc-PS shows no apparent saturation with increasing field strength. It reaches $2.2 \times 10^{8}$ cm/s at room temperature at an electric field of 29.1 kV/cm. This drift velocity is 22 times as large as that in c-Si. To obtain such a high drift velocity, the electrons should be accelerated ballistically over 1.6 μm. It appears that the probability of scattering to cause a large change of the electron momentum vector is significantly reduced in nc-PS. These results support the model that electrons can travel ballistically via a multiple-tunneling cascade through the interfacial barriers between interconnected silicon nanocrystallites.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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Kojima Akira
Department Of Chemical And Materials Science Gunma National College Of Technology
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Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Graduate School Of Eng. To
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Kojima Akira
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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