Ion-Beam Modification of Amorphous WO_3 Film and Its Properties as a High-Contrast Inorganic Ion Resist
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概要
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The effect of ion-beam irradiation on amorphous WO_3 films was studied experimentally and in detail using thermionic Na^+ ions with an accelerating voltage of 4〜12kV. The films exhibit a resistive property of extremely high contrast (γ≃8) at ion doses beyond a threshold value D_<th>. The sensitivity (D_<th>≃5×10^<-4>C/cm^2 at 5 kV), which is almost independent of the film thickness, decreases gradually with increasing accelerating voltage. The behavior of the optical absorption spectra and the ion-induced secondary electron emission yield of the irradiated films suggests the formation of sodium tungsten bronze, Na_xWO_3, by ion implantation. The resistive property can thus be explained from the metal transition of Na_xWO_3 at the threshold dose.
- 社団法人応用物理学会の論文
- 1985-01-20
著者
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Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Graduate School Of Eng. To
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Koshida Nobuyoshi
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture And Techn
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TOMITA Osamu
Department of Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Tec
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Tomita O
Tokyo Univ. Agriculture And Technology Tokyo Jpn
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Tomita Osamu
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture And Techn
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