Fabrication of Periodic Si Nanostructure by Controlled Anodization
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概要
- 論文の詳細を見る
It is demonstrated that anodization of heavily doped n-type silicon in the dark is available for producing periodic silicon nanostructures. The relationship between the porous silicon (PS) morphology and the anodization parameters have been investigated in detail using high resolution scanning microscopy. Analyses of mean valence during the dissolution process indicate that the straight periodic silicon nanostructure is formed under an appropriate condition corresponding to the transition region from ideal anodization to electropolishing mode. For producing more uniform periodic nanostructures, introduction of an external magnetic field during anodization is very effective. The experimental results show that controlled anodization is useful for periodic silicon nanofabrication.
- 社団法人応用物理学会の論文
- 1998-12-30
著者
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KOSHIDA Nobuyoshi
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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Koshida Nobuyoshi
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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NAKAGAWA Takashi
Division of Electronic and Information Engineering, Tokyo University of Agriculture and Technology
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Sugiyama H
Data Storage Amp Retrieval Systems Division Hitachi Ltd.
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SUGIYAMA Hisakazu
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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Sugiyama Hisakazu
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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Nakagawa Takashi
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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Koshida Nobuyoshi
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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