Radiative Transition with Visible Light in Electrochemical Anodized Polycrystalline Silicon

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概要

• 論文の詳細を見る

• Radiative transition with visible light was observed by means of a porous layer made from polycrystalline silicon (poly-Si). Photoluminescence (PL) spectra were characterized as a function of initial poly-Si materials. For poly-Si formed by the casting method, a PL spectrum with the peak energy of 2.00 eV and the full width at half maximum (FWHM) of 0.42 eV were obtained. For poly-Si formed by thermal CVD, the peak energy and the FWHM were 1.84 eV and 0.57 eV, respectively. On the basis of these findings, the structure of a highly developed display system, which contains TFT and luminous regions in the same poly-Si layer, was also proposed.

• 社団法人応用物理学会の論文
• 1993-01-15

著者

• KOSHIDA Nobuyoshi

  Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric

• Koshida Nobuyoshi

  Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul

• UENO Tomo

  Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric

• TARUI Yasuo

  Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric

• KOYAMA Hideki

  Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric

• Koyama Hideki

  Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul

• Ueno T

  Tokyo Univ. Agriculture And Technol. Tokyo Jpn

• Ueno Tomo

  Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul

• Tarui Yasuo

  Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul

• Akiba Yuichi

  Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul

• SHINOHARA Toshiro

  Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric

• Koyama Hideki

  Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul

• Shinohara Toshiro

  Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul

• Koshida Nobuyoshi

  Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul

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