Characterization of CVD-TiN Films Prepared with Metalorganic Source
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概要
- 論文の詳細を見る
This paper investigates the structural and electrical properties of TiN films prepared by metalorganic chemical vapor deposition (MOCVD) using a mixture of tetradimethylamino-titanium (Ti(N(CH_3)_2)_4) and NH_3 gases. The deposited films changed from a metallic gray to a gold color at a substrate temperature of 300〜580℃. The film resistivity decreases with increasing substrate temperature to 8.4×10^2 μΩ・cm at 580℃. The preferred orientation was (111) at temperatures over 400℃.
- 社団法人応用物理学会の論文
- 1990-10-20
著者
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KAMISAKO Koichi
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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TARUI Yasuo
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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Yamazaki K
Ntt Basic Research Laboratories Ntt Corporation
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Tarui Y
National Institute Of Advanced Industrial Science And Technology
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Tarui Yasuo
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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Tarui Yasuo
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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Ishihara K
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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Yamazaki K
Nippon Motorola Ltd. Tokyo Jpn
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Kamisako Koichi
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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ISHIHARA Kazuya
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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YAMAZAKI Katsumi
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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HAMADA Hidenao
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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Hamada Hidenao
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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Yamazaki Katsumi
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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