Amorphous Silicon Thin-Film Transistors Employing Photoprocessed Tantalum Oxide Films as Gate Insulators
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-01-20
著者
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Kurihara Koji
Faculty Of Technology Tokyo University Of Agricuture And Technology
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NAGAYOSHI Hiroshi
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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KUROIWA Koichi
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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TARUI Yasuo
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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NAGAYOSHI Hiroshi
Faculty of Technology, Tokyo University of Agriculture and Technology
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Tarui Yasuo
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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Matsui M
Central Research Laboratory Asahi Chemical Industry Co. Ltd.
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Kamisako K
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Kuroiwa K
Faculty Of Technology Tokyo University Of Agricuture And Technology
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TARUI Yasuo
National Institute of Advanced Industrial science and Technology
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TANIMOTO Satoshi
Electronics Research Laboratory, Nissan Motor Co., Ltd.
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Tanimoto Satoshi
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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MATSUI Masahiro
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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MUTO Goro
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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Muto Goro
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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Nagayoshi H
Faculty Of Technology Tokyo University Of Agriculture And Technology
関連論文
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- Generation Mechanism of Tensile Stress in a-Si_N_x Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
- Residual Stress of a-Si_N_x:H Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
- High-Intensity Vacuum Ultraviolet Light Source in Windowless Photochemical Vapor Deposition Reactor and Its Application to a-Si:H Deposition
- Effect of Hydrogen-Radical Annealing for SiO_2 Passivation
- Strain Mechanism of LiNbO_3/Sapphire Heterostructures Grown by Pulsed Laser Deposition
- Surface Acoustic Wave Properties of Lithium Tantalate Films Grown by Pulsed Laser Deposition
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- Effect of Reducing Process Temperature for Preparing SrBi_2Ta_20_9 in a Metal/Ferroelectric/ Semiconductor Structure
- Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Structure Using SrBi_2Ta_2O_9 as the Ferroelectric Material
- Crystal and Electrical Characterizations of Epitaxial Ce_XZr_O_2 Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor
- Characterization of Metal/Ferroelectric/Insulator/Semiconductor Structure with CeO_2 Buffer Layer
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- Optical Characterization of Undoped a-Si:H Prepared by Photo-CVD and GD Techniques
- Etching and Surface Modification of GaAs by Hydrogen Radicals Generated by Hydrogen Microwave Afterglow Method
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- Injection, Trapping and Release from SiO_2 of Photo-Generated Hole Charge for an Erasable Non-Volatile Optical Memory
- Radiative Transition with Visible Light in Electrochemical Anodized Polycrystalline Silicon
- Characterization of CVD-TiN Films Prepared with Metalorganic Source
- Characterization of Pb(Zr,Ti)O_3 Thin Films on Si Substrates Using MgO Intermediate Layer for Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Devices
- Fabrication of c-Axis Oriented Pb(Zr, Ti)O_3 Thin Films on Si(100) Substrates Using MgO Intermediate Layer
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- In-situ After-treatment Using Low-energy Dry-etching with a CF4/O2 Gas Mixture to Remove Reactive Ion Etching Damage
- Characteristics of a SrS:Ce Thin-Film Electroluminescent Device Prepared by Post-Annealing in H_2S
- Effects of Post-Annealing in H_2S on Photo- and Electroluminescence Properties of SrS:Ce Thin Film
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- Low-energy Ion Scattering Measurement of Near-surface Damage Induced by the SiO_2 Dry-Etching Process
- Doping-Induced Defects in P-Doped Photo-CVD a-Si:H
- Characterization of Photo-CVD a-Si:H Films by Thin-Film Transistor Structure
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