In-situ After-treatment Using Low-energy Dry-etching with a CF4/O2 Gas Mixture to Remove Reactive Ion Etching Damage
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概要
- 論文の詳細を見る
We have investigated a new method of in-situ after-treatment that precisely and anisotropically removes dry-etching damage induced by reactive-ion etching (RIE) of SiO2, especially in self-aligned contact (SAC) processing, through, low-energy etching in the dry-etching chamber after the RIE. This in-situ after-treatment with a CF4/Ar gas mixture and with a CF4/O2 gas mixture were examined. The after-treatment with the CF4/O2 gas almost completely removed both the chemical damage and the crystalline damage. On the other hand, although RIE damage could be reduced by after-treatment with the CF4/Ar gas mixture, severe crystal damage remained. The after-treatment with the CF4/O2 gas mixture could precisely remove the surface damage and allowed us to control the surface roughness during removal of RIE damage.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-04-30
著者
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Tada T
Analytical Research Laboratories Fujisawa Pharmaceutical Co. Ltd.
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Tokunaga Takashi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Arai Hiromasa
Hitachi Semiconductor And Ic Division
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Kojima Mamoru
Hitachi Semiconductor And Ic Division
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Matsui M
Central Research Laboratory Asahi Chemical Industry Co. Ltd.
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Matsui Miyako
Hitachi Ltd. Central Research Laboratory
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UCHIDA Fumihiko
Hitachi Central Research Laboratory, Hitachi, Ltd.
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TOKUNAGA Takafumi
Hitachi Device Development Center
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Kojima Masayuki
Hitachi Semiconductor and IC Division, 5-20-1 Jyousui-honcho, Kodaira-shi, Tokyo 187, Japan
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Yamazaki Kazuo
Hitachi Semiconductor and IC Division, 5-20-1 Jyousui-honcho, Kodaira-shi, Tokyo 187, Japan
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Katsuyama Kiyomi
Hitachi Device Development Center, 2326 Imai-cho, Ome-shi, Tokyo 198, Japan
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Katsuyama K
Sumitomo Electric Ind. Ltd. Yokohama Jpn
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Uchida F
Aoyama Gakuin Univ. Tokyo Jpn
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Yamazaki Kazuo
Hitachi Semiconductor And Ic Division
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Katsuyama Kiyomi
Hitachi Device Development Center
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Kojima Masayuki
Hitachi Semiconductor and IC Division
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