In-Situ Measurement of He^+ Stopping in Si Layers by Low-Energy Ion-Scattering Spectroscopy

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概要

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• We investigated the energy loss process for 2.0-keV He^+ baems in amorphous Si(a-Si) by using low-energy ion-scattering spectroscopy. A-Si layers with thicknesses ranging from 2.0 to 8.0 nm were formed on Ge(2 monoleyers)/Si(100) by molecular beam epitaxy under ultrahigh vacuum conditions. Backscattering measurements were performed in situ so as not to change their surfaces. The Ge peak shifted with the thickness of the a-Si overlayer, indicating an energy loss from 1.3 to 2.0-keV He^+ in the a-Si layer. The obtained experimental energy shifts were compared with those calculated by Lindhard and Scharff (LS) and Ziegler, Biersack and Littmark (ZBL). The present results generally agree with their theoretical calculations.

• 社団法人応用物理学会の論文
• 1996-03-15

著者

• Nishida Akio

  Hitachi Ltd. Central Research Laboratory

• Matsui Miyako

  Hitachi Ltd. Central Research Laboratory

• UCHIDA Fumihiko

  Hitachi Central Research Laboratory, Hitachi, Ltd.

• Nakagawa Kiyokazu

  Hitachi Ltd. Central Research Laboratory

• Uchida Fumihiko

  Hitachi Ltd. Central Research Laboratory

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