Using Auger Electron Spectroscopy for Chemical Analysis of Plasma Damage Induced by Reactive Ion Etching of SiO_2

概要

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Surface damage induced by reactive ion etching (RIE) at the bottom of the pattern was investigated in terms of chemical information by Auger electron spectroscopy (AES). The Si-L_<23>VV line shape was changed during the removal of the damage by chemical dry etching after RIE. The relationship between the changing of the Si-L_<23>VV line shape and the chemically damaged layer, which contaitas SiO_x and SiC, was investigated by X-ray photoelectron spectroscopy (XPS) and AES for nonpatterned wafers. The height of the peaks at 90 eV and 79 eV in the Si-L_<23>VV spectra were correlated with the amounts of chemical damage in the layer measured by XPS. The thickness of the residual SiO_x damage was estimated from the relationship between the Si-L_<23>VV line shape and the thickness of the SiO_x layer. This relationship was applied to the chemical analysis for patterned wafers. The line shape of the Si-L_<23>VV spectrum from the bottom of the pattern was also changed as the chemical-dry-etching time increased.
社団法人応用物理学会の論文
1998-11-15