Low-energy Ion-scattering Spectroscopic Analysis of Structural Damage in Si Substrate under Ultrathin SiO_2 after Gate Etching
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-04-15
著者
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Tada T
Analytical Research Laboratories Fujisawa Pharmaceutical Co. Ltd.
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Tokunaga Takashi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Enomoto Hiroyuki
Hitachi Device Development Center
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Matsui M
Central Research Laboratory Asahi Chemical Industry Co. Ltd.
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Matsui Miyako
Hitachi Ltd. Central Research Laboratory
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UCHIDA Fumihiko
Hitachi Central Research Laboratory, Hitachi, Ltd.
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TOKUNAGA Takafumi
Hitachi Device Development Center
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UMEZAWA Tadashi
Hitachi Device Development Center
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Tokunaga Takashi
Mitsubishi Electric Corp
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Uchida F
Aoyama Gakuin Univ. Tokyo Jpn
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