Characteristics of a SrS:Ce Thin-Film Electroluminescent Device Prepared by Post-Annealing in H_2S
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概要
- 論文の詳細を見る
Strontium sulfide doped with cerium(SrS:Ce)thin-film electroluminescent(TFEL)devices annealed in the presence of H_2S are investigated. X-ray diffraction patterns of SrS phosphor layers show a preferential(220)orientation, and cerium accumulated in the lower portion of the phosphor in samples annealed in H_2S. The relative concentrations of S and Sr(S/Sr ratios)of the phosphors before annealing are thought to be responsible for the EL characteristics. Annealing in H_2S had a significant effect on the crystallinity of phosphors with low S/Sr ratios before annealing.
- 社団法人応用物理学会の論文
- 2000-07-15
著者
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Wakihara Masataka
Department Of Applied Chemistry Graduate School Of Science And Engineering Tokyo Institute Of Techno
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Matsui M
Central Research Laboratory Asahi Chemical Industry Co. Ltd.
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Wakihara M
Department Of Applied Chemistry Graduate School Of Science And Engineering Tokyo Institute Of Techno
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Matsui Masahiro
Central Laboratory Asahi Chemical Industry Co. Ltd
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Morishita T
Superconductivity Research Laboratory International Superconductivity Technology Center
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MORISHITA Takashi
Central Research Laboratory, Asahi Chemical Industry Co., Ltd.
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MATSUYAMA Hiroyoshi
Central Research Laboratory, Asahi Chemical Industry Co., Ltd.
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Matsuyama H
Central Research Laboratory Asahi Chemical Industry Co. Ltd.
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Morishita Takashi
Central Research Laboratory Asahi Chemical Industry Co. Ltd.
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Matsuyama Hiroyoshi
Central Research Laboratory Asahi Chemical Industry Co. Ltd.
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