Solar Cells Based on CuInS_2 Thin Films through Sulfurization of Precursors Prepared by Reactive Sputtering with H_2S Gas
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概要
- 論文の詳細を見る
CuInS_2 films were prepared using a two-stage process in which Cu-In-S precursors were sputtered in H_2S/Ar with metal targets (Cu and In) and then annealed in H_2S atmosphere. Control of S content in the precursor is essential for fabricating high-quality CuInS_2 films and achieving high-efficiency solar cells. When S/(Cu+In) ratio in the precursor was about 0.3, CuInS_2 films with good crystallinity and smooth surface were obtained, and consequently a CuInS_2 solar cell with an efficiency of 6.3% has been achieved without KCN treatment.
- 社団法人応用物理学会の論文
- 1996-03-15
著者
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WATANABE Takayuki
Central Laboratory, Asahi Chemical Industry Co. Ltd.
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Matsui Masahiro
Central Laboratory Asahi Chemical Industry Co. Ltd
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Watanabe Takayuki
Central Laboratory Asahi Chemical Industry Co. Ltd
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