Improved Efficiency of CuInS_2-Based Solar Cells without Potassium Cyanide Process

概要

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A high open-circuit voltage (V_<oc>) exceeding 0.80 V was obtained by adding Ga to Na-incorporated CuInS_2 thin films. Cu(In,Ga)S_2 films were fabricated by sulfurization of Na-containing Cu-In-Ga precursors in H_2S atmosphere. The inclining Ga profile resulted in a graded band gap. Therefore, the enhancements of cell performance by Ga addition were not only increase in Voc but also that in short-circuit current density (J_<sc>). We achieved an efficiency of 11.2% with V_<oc> = 0.802 V, J_<sc> = 20.9mA/cm^2 and FF = 0.667. This is the highest efficiency reported for CuInS_2 solar cells fabricated without the potassium cyanide (KCN) process.
社団法人応用物理学会の論文
1999-12-01