Low-energy Ion Scattering Measurement of Near-surface Damage Induced by the SiO_2 Dry-Etching Process
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概要
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St(100) surface crystallinity after dry etching was measured using low-energy ion scattering spectroscopy (LEIS). We used 4-keV He^+ ions as the incident beam, and neutral particles back-scattered at 180° were detected. A heavily damaged layer was observed immediately after reactive ion etching. After the heavily damaged layer was removed using a post-etch treatment, channeling and focusing effects were observed. The presence of a modified layer was confirmed even after the suboxide-rich layers were removed, because the channeling and focusing effects were slightly weaker than those of the surface without dry etching.
- 社団法人応用物理学会の論文
- 1998-04-15
著者
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Tada T
Analytical Research Laboratories Fujisawa Pharmaceutical Co. Ltd.
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Tokunaga Takashi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Kojima Mamoru
Hitachi Semiconductor And Ic Division
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Matsui M
Central Research Laboratory Asahi Chemical Industry Co. Ltd.
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Matsui Miyako
Hitachi Ltd. Central Research Laboratory
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UCHIDA Fumihiko
Hitachi Central Research Laboratory, Hitachi, Ltd.
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TOKUNAGA Takafumi
Hitachi Device Development Center
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Tokunaga Takashi
Mitsubishi Electric Corp
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Kojima Masayuki
Hitachi Semiconductor and IC Division, 5-20-1 Jyousui-honcho, Kodaira-shi, Tokyo 187, Japan
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Katsuyama Kiyomi
Hitachi Device Development Center, 2326 Imai-cho, Ome-shi, Tokyo 198, Japan
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Katsuyama K
Sumitomo Electric Ind. Ltd. Yokohama Jpn
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Uchida F
Aoyama Gakuin Univ. Tokyo Jpn
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Katsuyama Kiyomi
Hitachi Device Development Center
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Kojima Masayuki
Hitachi Semiconductor and IC Division
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