Katsuyama Kiyomi | Hitachi Device Development Center, 2326 Imai-cho, Ome-shi, Tokyo 198, Japan

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概要

• 同名の論文著者
• Hitachi Device Development Center, 2326 Imai-cho, Ome-shi, Tokyo 198, Japanの論文著者

関連著者

• Tada T

  Analytical Research Laboratories Fujisawa Pharmaceutical Co. Ltd.

• Tokunaga Takashi

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Kojima Mamoru

  Hitachi Semiconductor And Ic Division

• Matsui M

  Central Research Laboratory Asahi Chemical Industry Co. Ltd.

• Matsui Miyako

  Hitachi Ltd. Central Research Laboratory

• UCHIDA Fumihiko

  Hitachi Central Research Laboratory, Hitachi, Ltd.

• TOKUNAGA Takafumi

  Hitachi Device Development Center

• Kojima Masayuki

  Hitachi Semiconductor and IC Division, 5-20-1 Jyousui-honcho, Kodaira-shi, Tokyo 187, Japan

• Katsuyama Kiyomi

  Hitachi Device Development Center, 2326 Imai-cho, Ome-shi, Tokyo 198, Japan

• Katsuyama K

  Sumitomo Electric Ind. Ltd. Yokohama Jpn

• Uchida F

  Aoyama Gakuin Univ. Tokyo Jpn

• Katsuyama Kiyomi

  Hitachi Device Development Center

• Kojima Masayuki

  Hitachi Semiconductor and IC Division

• Tokunaga Takashi

  Mitsubishi Electric Corp

• Arai Hiromasa

  Hitachi Semiconductor And Ic Division

• Yamazaki Kazuo

  Hitachi Semiconductor and IC Division, 5-20-1 Jyousui-honcho, Kodaira-shi, Tokyo 187, Japan

• Yamazaki Kazuo

  Hitachi Semiconductor And Ic Division

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著作論文

• In-situ After-treatment Using Low-energy Dry-etching with a CF4/O2 Gas Mixture to Remove Reactive Ion Etching Damage
• Using Auger Electron Spectroscopy for Chemical Analysis of Plasma Damage Induced by Reactive Ion Etching of SiO_2
• Low-energy Ion Scattering Measurement of Near-surface Damage Induced by the SiO_2 Dry-Etching Process

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