Preparation of SrBi_2Ta_2O_9 Film at Low Temperatures and Fabrication of a Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Using Al/SrBi_2Ta_2O_9/CeO_2/Si(100) Structures
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-09-30
著者
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Koike H
Nec Corp. Kanagawa Jpn
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Kishi H
General R&d Laboratories Taiyo Yuden Co. Ltd.
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Kishi Hiroshi
Taiyo Yuden Co. Ltd.
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Hirai T
Tohoku Univ. Sendai‐shi
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Hirai Toshihiro
Material Development Research Laboratory Nippon Mining Co. Lid.
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Kishi Hiroshi
General R&d Laboratories Toiyo Yuden Co. Ltd.
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Kishi Hiroshi
The School Of Science And Engineering Waseda University
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Hirai Tadahiko
The School of Science and Engineering, Waseda University
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Tarui Y
National Institute Of Advanced Industrial Science And Technology
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Hirai T
Canon Inc. Tokyo Jpn
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TARUI Yasuo
National Institute of Advanced Industrial science and Technology
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FUJISAKI Yoshihide
Central Laboratory, Asahi Chemical Industry Co., Ltd.
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NAGASHIMA Kazuhito
Central Laboratory, Asahi Chemical Industry Co., Ltd.
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KOIKE Hiroshi
Central Laboratory, Asahi Chemical Industry Co., Ltd.
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TARUI Yasuo
Central Laboratory, Asahi Chemical Industry Co., Ltd.
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Nagashima K
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Fujisaki Y
R&d Association For Future Electron Devices
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Fujisaki Yoshihisa
R&D Association for Future Electron Devices
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