Fujisaki Yoshihisa | R&D Association for Future Electron Devices
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概要
関連著者
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Fujisaki Y
R&d Association For Future Electron Devices
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Fujisaki Yoshihisa
R&D Association for Future Electron Devices
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Fujisaki Yoshihisa
Central Research Laboratory Hitachi Limited
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FUJISAKI Yoshihisa
Central Research Laboratory, Hitachi Ltd.
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Miura H
Hitachi Ltd. Tsuchiura‐shi Jpn
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MIKI Hiroshi
Department of Pathology, Kagawa Medical University
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Miki Hiroshi
Central Research Laboratory Hitachi Limited
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Matsui Yasushi
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat
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MATSUI Yuichi
Central Research Laboratory, Hitachi, Ltd.
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Muto Y
The Institute For Materials Research Tohoku University
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Miki Hiroshi
Central Research Laboratory Hitachi Ltd.
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Kushida‐abdelghafar K
The Authors Are With Central Research Laboratory Hitachi Ltd.
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Koike H
Nec Corp. Kanagawa Jpn
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Hirai T
Tohoku Univ. Sendai‐shi
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Hirai Toshihiro
Material Development Research Laboratory Nippon Mining Co. Lid.
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Kishi Hiroshi
General R&d Laboratories Toiyo Yuden Co. Ltd.
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Kishi Hiroshi
The School Of Science And Engineering Waseda University
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TORII Kazuyoshi
Central Research Laboratory, Hitachi, Ltd.
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Torii K
Central Research Laboratory Hitachi Ltd.
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Torii Kazuyoshi
Central Research Laboratory Hitachi Lid.
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Torii K
Semiconductor Leading Edge Technol. Inc. Tsukuba-shi Jpn
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Tarui Y
National Institute Of Advanced Industrial Science And Technology
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Hirai T
Canon Inc. Tokyo Jpn
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TARUI Yasuo
National Institute of Advanced Industrial science and Technology
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Nagashima K
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Hiratani M
Central Research Laboratory Hitachi Ltd.
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Hiratani M
Central Research Laboratory Hitachi Ltd
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Hiratani Masahiko
Central Research Laboratory Hitachi Ltd.
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SAITO HIROSHI
Department of Neurology, Tohoku University School of Medicine
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Takano Y
Department Of Pharmacology Faculty Of Pharmaceutical Sciences Fukuoka University
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Takano Yukio
Department Of Physiology And Pharmacology Faculty Of Pharmaceutical Sciences Fukuoka University
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大石 正和
岡山大理
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Saito Hironobu
Fukushima Toyo Communication Equipment Co. Ltd.
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SAITO Hisao
NTT Basic Research Laboratories
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Takano Yukio
Central Research Laboratory Hitachi Ltd.
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Takano Yukio
Central Research Laboratory
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ISHIBA Tsutomu
Central Research Laboratory, Hitachi Ltd.
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Kishi H
General R&d Laboratories Taiyo Yuden Co. Ltd.
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Kishi Hiroshi
Taiyo Yuden Co. Ltd.
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Hirai Tadahiko
The School of Science and Engineering, Waseda University
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Tarui Yasuo
The School of Science and Engineering, Waseda University
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TORIHARA Hiroshi
Department of Applied Physics, Faculty of Science, Okayama University of Science
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FUJISAKI Yasunori
Department of Applied Physics, Faculty of Science, Okayama University of Science
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Saito H
Nec Corp. Ibaraki Jpn
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Ishiba T
Central Research Laboratory Hitachi Ltd.
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Ishiba Tsutomu
Central Research Laboratory Hitachi Ltd.
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NAGASHIMA Kazuhito
The School of Science and Engineering, Waseda University
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KOIKE Hiroshi
The School of Science and Engineering, Waseda University
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KUSHIDA Keiko
Central Research Lab., Hitachi, Lid.
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Kushida-abdelghafar Keiko
Central Research Laboratory Hitachi Limited
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Shimamoto Yasuhiro
Central Research Laboratory Hitachi Ltd.
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FUJISAKI Yoshihide
The School of Science and Engineering, Waseda University
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Torihara Hiroshi
Department Of Applied Physics Faculty Of Science Okayama University Of Science
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大石 正和
Department Of Applied Physics Okayama University Of Science
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SAITO Hideaki
Laser Laboratory, Second Research Center, TRDI, Japan Defense Agency
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Shimamoto Y
Hitachi Ltd. Tokyo Jpn
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Saito Hiroshi
Department Of Cardiovascular Medicine Osaka University Graduate School Of Medicine
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Tarui Yasuo
The School Of Science And Engineering Waseda University
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Saito Hiroshi
Department of Applied Chemistry, Graduate School of Engineering, Tohoku University
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KIJIMA Takeshi
Technology Platform Research Center, SEIKO EPSON CORPORATION
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MIYASAKA Yoichi
Fundamental Research Laboratories, NEC Corporation
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MIURA Hideo
Mechanical Engineering Research Laboratory, Hitachi, Ltd.
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Sakaguchi Harunori
Cable Research Laboratory, Hitachi Cable, Ltd.
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Ono Yuuichi
Central Research Laboratory, Hitachi, Ltd.
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Matsui Y
Assoc. Super‐advanced Electronics Technol. (aset) Kanagawa Jpn
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Matsui Y
Nims Tsukuba Jpn
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ISHIWARA Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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OHISHI Masakazu
Department of Applied Physics, Okayama University of Science
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc
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Ohmori Koichi
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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OHMORI Kenzo
Department of Applied Physics, Faculty of Science, Okayama University of Science
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SHIMAMOTO Yasuhiro
Central Research Laboratory, Hitachi, Ltd.
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Matsui Y
Central Research Laboratory Hitachi Ltd.
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Suga Mitsuo
Central Research Laboratory Hitachi Ltd.
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Ono Yuuichi
Central Research Laboratory Hitachi Ltd.
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Yano Fumiko
Central Research Laboratory Hitachi Limited
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Ohmori Kenzo
Department Of Applied Physics Okayama University Of Science
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Koike H
Kawasaki Heavy Ind. Ltd. Chiba Jpn
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Kijima T
Functional Devices Laboratories Sharp Corporation
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Kijima Takeshi
Technology Platform Research Center Seiko Epson Corporation
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Kijima Takeshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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HIRAI Tadahiko
LSI Laboratories, Asahi Chemical Industry Co., Ltd.
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Kushida K
Hitachi Ltd. Tokyo Jpn
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FUJISAKI Yoshihisa
The authors are with Central Research Laboratory, Hitachi Ltd.
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KUSHIDA-ABDELGHAFAR Keiko
The authors are with Central Research Laboratory, Hitachi Ltd.
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MIKI Hiroshi
The authors are with Central Research Laboratory, Hitachi Ltd.
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SHIMAMOTO Yasuhiro
The authors are with Central Research Laboratory, Hitachi Ltd.
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FUJISAKI Yoshihide
Central Laboratory, Asahi Chemical Industry Co., Ltd.
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NAGASHIMA Kazuhito
Central Laboratory, Asahi Chemical Industry Co., Ltd.
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KOIKE Hiroshi
Central Laboratory, Asahi Chemical Industry Co., Ltd.
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TARUI Yasuo
Central Laboratory, Asahi Chemical Industry Co., Ltd.
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HASE Takashi
Fundamental Research Laboratories, NEC Corporation
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Ohnishi Masakazu
Department of Applied Physics, Faculty of Science, Okayama University of Science
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Ablet Iminjan
Department of Applied Physics, Faculty of Science, Okayama University of Science
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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Ohishi Masakazu
Department Of Applied Physics Faculty Of Science Okayama University Of Science
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Ablet Iminjan
Department Of Applied Physics Faculty Of Science Okayama University Of Science:(present Address)depa
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FUJISAKI Yoshihisa
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Sakaguchi Harunori
Cable Research Laboratory Hitachi Cable Ltd.
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Hase Takashi
Fundamental Research Laboratories Nec Corporation
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KUMAGAI Yukihiro
Mechanical Engineering Research Laboratory, Hitachi, Lid.
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Kijima Takeshi
Functional Devices Laboratories Sharp Corporaton
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Miyasaka Yoichi
Fundamental Research Laboratories Nec Corporation
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Kumagai Yukihiro
Mechanical Engineering Research Laboratory Hitachi Lid.
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Miura Hideo
Mechanical Engineering Research Laboratory Hitachi Lid.
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Kumagai Yuki
Mechanical Engineering Research Laboratory, Hitachi, Lid.
著作論文
- Nondestruetive Characterization of Deep Levels in Semi-Insulating GaAs Wafers Using Microwave Impedance Measurement
- Dependence of Deep Level Concentration on Nonstoiehiometry in MOCVD GaAs
- Molecular Beam Epitaxially Grown ZnSe(001) Surface Studied by the In Situ Observation of RHEED Intensity
- Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors
- Hydrogen-related Degradation and Recovery Phenomena in Pb(Zr,Ti)O_3 Capacitors with a Platinum Electrode
- Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors
- Analysis of Decomposed Layer Appearing on the Surface of Barium Strontium Titanate
- Improved Resistance Against the Reductive Ambient Annealing of Ferroelectric Pb(Zr, Ti)O_3 Thin Film Capacitors with IrO_2 Top Electrode(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Preparation of SrBi_2Ta_2O_9 Film at Low Temperatures and Fabrication of a Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Using Al/SrBi_2Ta_2O_9/CeO_2/Si(100) Structures
- Effect of Reducing Process Temperature for Preparing SrBi_2Ta_20_9 in a Metal/Ferroelectric/ Semiconductor Structure
- Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Structure Using SrBi_2Ta_2O_9 as the Ferroelectric Material
- Low Temperature Growth of ZnSe/GaAs Using Post-Heated Molecular Beams
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
- IrO_2/Pb(Zr_xTi_)O_3(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to Hydrogen-Annealing Damage
- Oxygen Diffusion in Pt Botton Electrodes of Ferroelectric Capacitors
- Thermal Stability of Pt Bottom Electrodes for Ferroelectric Capacitors